APD05-8-150-T52

Photodiode by OSI Optoelectronics

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The APD05-8-150-T52 from OSI Optoelectronics is a Photodiode with Wavelength Range 800 nm, Bandwidth 900 MHz, Capacitance 3 pF, Dark Current 0.1 to 1 nA, Responsivity/Photosensitivity 50 A/W. More details for APD05-8-150-T52 can be seen below.

Product Specifications

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Product Details

  • Part Number
    APD05-8-150-T52
  • Manufacturer
    OSI Optoelectronics
  • Description
    APD Series 8-150 Silicon Avalanche Photodiodes, 800 nm band

Applications

  • Application
    Optical Fiber Communication, Laser range finder, High speed photometry

General Parameters

  • Breakdown Voltage
    150 to 200 uA
  • Configuration
    Single
  • Channels
    Single
  • Module
    No
  • Package
    Through-Hole
  • Package Type
    Through-Hole
  • Photodetector Type
    Avalanche
  • Operation Mode
    Photoconductive
  • Wavelength Range
    800 nm
  • Photodiode Material
    Silicon
  • Quantum Efficiency
    0.75
  • Bandwidth
    900 MHz
  • Capacitance
    3 pF
  • Dark Current
    0.1 to 1 nA
  • Responsivity/Photosensitivity
    50 A/W

Physical Properties

  • Active Area
    0.19 mm x 0.19 mm
  • Active Area Diameter
    0.5 mm

Temperature

  • Operating Temperature display
    -40 to 100 Degree C
  • Storage Temperature
    -55 to 125 Degree C
  • Temperature Coefficient
    0.45 V/Degree C

Technical Documents

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