Photodiode by OSI Optoelectronics

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The FCI-InGaAs-300B1XX from OSI Optoelectronics are Back-Illuminated InGaAs Photodiode/Arrays that have a spectral range of 900 to 1700 nm. They have an active area diameter of 300 μm and a pitch of 500 μm with a minimum responsivity of 0.8-0.85 A/W. These photodiodes are designed to be flip chip mounted to an optical plane for front or back illumination. They can be mounted traditionally (active area facing up) or assembled face down minimizing the overall dimensions. These photodiodes have a minimum bandwidth of 100 MHz with 8 pF capacitance and a dark current of 0.05 nA. They have a minimum breakdown voltage of 10 V and a maximum forward current of 25 mA. These photodiodes are available as a single element diode or 4/8-elements array and are ideal for high speed optical communications, multichannel fiber optic receiver, power monitoring, single/multi-mode fiber optic receiver, fast ethernet, SONET/SDH OC-3/STM-1, ATM, instrumentation and analog receiver applications.

Product Specifications View similar products

Product Details

  • Part Number
  • Manufacturer
    OSI Optoelectronics
  • Description
    900 to 1700 nm Back-Illuminated InGaAs Photodiode/Arrays


  • Application
    Optical Communications, Fiber Optic Receiver, Power Monitoring, Instrumentation and Analog Receivers

General Parameters

  • Breakdown Voltage
    10 V
  • Channels
  • Configuration
  • Forward Current
    25 mA
  • Module
  • Package Type
    Ceramic, Surface Mount
  • Photodetector Type
  • Operation Mode
  • Wavelength Range
    900 to 1700 nm
  • Photodiode Material
  • Reverse Current
    5 mA
  • Reverse Voltage
    15 V
  • Bandwidth
    100 MHz
  • Capacitance
    8 to 10 pF
  • Dark Current
    0.05 to 5 nA
  • Responsivity/Photosensitivity
    0.80 to 0.85 A/W

Physical Properties

  • No. of Elements
    4 or 8 elements
  • Active Area Diameter
    300 ┬Ám


  • Operating Temperature display
    0 to 70 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents

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