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OSD35-LR-A

Photodiode by OSI Optoelectronics
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The OSD35-LR-A from OSI Optoelectronics is a Photodiode with Wavelength Range 830 nm, Capacitance 1300 pF, Responsivity/Photosensitivity 0.54 A/W. More details for OSD35-LR-A can be seen below.

Product Specifications

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Product Details

  • Part Number
    OSD35-LR-A
  • Manufacturer
    OSI Optoelectronics
  • Description
    Fully Depleted Photodiodes

Applications

  • Application
    Laser Applications, Control Systems, Electron Detection, High Energy Physics, Medical Instrumentation

General Parameters

  • Channels
    Single
  • Module
    No
  • Noise equivalent power(NEP) :
    5.6 e-15 W/vHz
  • Package
    Ceramic
  • Package Type
    Ceramic
  • Operation Mode
    Photovoltaic
  • Wavelength Range
    830 nm
  • Photodiode Material
    Silicon
  • RoHs
    Yes
  • Shunt Resistance
    2 to 3 GOhm
  • Capacitance
    1300 pF
  • Responsivity/Photosensitivity
    0.54 A/W

Physical Properties

  • Active Area
    34.2 mm x 34.2 mm
  • Dimensions
    Active Area Dimensions: 5.8 x 5.9 mm

Temperature

  • Operating Temperature display
    -25 to 75 Degree C
  • Storage Temperature
    -45 to 100 Degree C

Technical Documents
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