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XUV-50C

Photodiode by OSI Optoelectronics
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The XUV-50C from OSI Optoelectronics is a Photodiode with Wavelength Range 350 to 1100 nm, Capacitance 2 to 3 nF. More details for XUV-50C can be seen below.

Product Specifications

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Product Details

  • Part Number
    XUV-50C
  • Manufacturer
    OSI Optoelectronics
  • Description
    Soft X-Ray, Far UV Enhanced Photodiodes

Applications

  • Application
    Electron Detection, Medical Instrumentation, Dosimetry, Radiation Monitoring, X-ray Spectroscopy, Charged Particle Detection

General Parameters

  • Channels
    Single
  • Module
    No
  • Noise equivalent power(NEP) :
    9.1 e-15 W/vHz
  • Package
    Ceramic
  • Package Type
    Ceramic
  • Operation Mode
    Photoconductive
  • Wavelength Range
    350 to 1100 nm
  • Photodiode Material
    Silicon
  • Reverse Voltage
    5 V
  • RoHs
    Yes
  • Shunt Resistance
    20 to 200 MOhm
  • Capacitance
    2 to 3 nF

Physical Properties

  • Active Area
    50 mm x 50 mm
  • Dimensions
    Active Area Dimensions: 8.02 mm

Temperature

  • Operating Temperature display
    -20 to 60 Degree C
  • Storage Temperature
    -20 to 80 Degree C

Technical Documents
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