SFH 206 K

Photodiode by OSRAM

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The SFH 206 K from OSRAM is a Silicon PIN Photodiode that has a photocurrent of 80 µA. This photodiode has a radiant sensitive area of 7.02 sq. mm and spectral sensitivity of 80 nA/lx. It has a peak sensitivity wavelength of 920 nm and a 2.65 mm x 2.65 mm active chip area. This photodiode has a half angle of 60º and 30 nA dark current. The chip has a spectral sensitivity of 0.62 A/W and a quantum yield of 0.90 electrons/photons. It has a rise and fall time of 0. 02µs. This photodiode has a noise equivalent power of 0.041 pW/Hz and a detection limit of 6.5 e12 cm x Hz/W.

The SFH 206 K photodiode is suitable for applications from 400 nm to 1100 nm. It has an open circuit voltage of 365 mV, a short circuit current of 80 µA, and a forward voltage of 1.3 V. This photodiode has a reverse voltage of less than 32 V and total power dissipation of 150 mW. It is available in a 5 mm LED clear epoxy plastic packing and is suitable for electronic equipment, white goods, and industrial automation (machine controls, light barriers, vision controls).

Product Specifications View similar products

Product Details

  • Part Number
    SFH 206 K
  • Manufacturer
  • Description
    420 nm - 1120 nm, Silicon PIN Photodiode for Industrial Automation

General Parameters

  • Channels
  • Configuration
  • Fall Time
    0.02 µs
  • Forward Voltage
    1.3 V
  • Noise equivalent power(NEP)
    0.041 pW / Hz½
  • Package Type
  • Photodetector Type
  • Wavelength Range
    420 to 1120 nm
  • Photodiode Material
  • Power Dissipation
    150 mW
  • Reverse Voltage
    32 V
  • Rise/Fall Time
    0.02 µs
  • Capacitance
    72 pF
  • Dark Current
    2 to 30 nA
  • Note
    Spectral Sensitivity: 80 nA/lx,


  • Operating Temperature display
    -40 to 100 Degree C
  • Storage Temperature
    -40 to 100 Degree C

Technical Documents

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