OSD0116-IC

Photodiode by OTRON

Note: Your Quotation Request will be directed to OTRON.

The OSD0116-IC from OTRON is a Photodiode with Wavelength Range 400 to 1100 nm, Capacitance 25 to 48 pF, Dark Current 15 to 25 nA, Responsivity/Photosensitivity 0.38 to 0.64 A/W, Rise Time 80 to 100 ns. More details for OSD0116-IC can be seen below.

Product Specifications

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Product Details

  • Part Number
    OSD0116-IC
  • Manufacturer
    OTRON
  • Description
    Silicon PIN Photodiode

Applications

  • Application
    Laser beam alignment, Edge & hole detection, IR/ Laser light Monitoring, Position sensing, Optical switch, Spectro photometers

General Parameters

  • Configuration
    Single
  • Channels
    Single
  • Detectivity
    1.67 x 1013 cm(Hz/W)1/2
  • Module
    No
  • Noise equivalent power(NEP) :
    2.58 x 10 -14 W/Hz 1/2
  • Package
    DIP16
  • Package Type
    DIP
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    400 to 1100 nm
  • Photodiode Material
    Silicon
  • Reverse Bias Voltage
    60 V
  • Reverse Voltage
    60 V
  • RoHs
    Yes
  • Short Circuit Current
    118 µA
  • Shunt Resistance
    0.5 GOhms
  • Capacitance
    25 to 48 pF
  • Dark Current
    15 to 25 nA
  • Responsivity/Photosensitivity
    0.38 to 0.64 A/W
  • Rise Time
    80 to 100 ns
  • Note
    1.0 x 16.0 mm2(Chip size), 350 mV(open circuit voltage)

Physical Properties

  • Active Area
    0.76 x 15.76 mm2

Temperature

  • Temperature Coefficient
    0.18 times/Degree C

Technical Documents

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