OSD1.21-22-IB

Photodiode by OTRON

Note: Your Quotation Request will be directed to OTRON.

The OSD1.21-22-IB from OTRON is a Photodiode with Wavelength Range 400 to 1100 nm, Capacitance 1.7 to 5.5 pF, Dark Current 20 to 180 pA, Responsivity/Photosensitivity 0.38 to 0.64 A/W. More details for OSD1.21-22-IB can be seen below.

Product Specifications

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Product Details

  • Part Number
    OSD1.21-22-IB
  • Manufacturer
    OTRON
  • Description
    Silicon PIN Photodiode Array

Applications

  • Application
    optical switcher, Automatic sensor, pulse laser detector, Industry machine

General Parameters

  • Configuration
    Array
  • Channels
    Single
  • Detectivity
    2.39 x 1014 W/Hz 1/2
  • Module
    No
  • Noise equivalent power(NEP) :
    2.39 x 10 -14 W/Hz 1/2
  • Package
    COB molding
  • Package Type
    Chip
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    400 to 1100 nm
  • Photodiode Material
    Silicon
  • Reverse Bias Voltage
    33 V
  • Reverse Voltage
    33 V
  • RoHs
    Yes
  • Shunt Resistance
    0.5 GOhms
  • Capacitance
    1.7 to 5.5 pF
  • Dark Current
    20 to 180 pA
  • Responsivity/Photosensitivity
    0.38 to 0.64 A/W

Physical Properties

  • Active Area
    1.1 x 1.1 x 22 mm2

Temperature

  • Operating Temperature display
    -40 to 100 Degree C
  • Storage Temperature
    -40 to 100 Degree C

Technical Documents

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