BPW21R

Photodiode by Vishay Intertechnology

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The BPW21R from Vishay Intertechnology is a Photodiode with Wavelength Range 420 to 675 nm, Capacitance 1.2 to 400 pF, Dark Current 2 to 30 nA (Reverse), Rise Time 3.1 µs, Active Area Diameter 8.13 mm. More details for BPW21R can be seen below.

Product Specifications

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Product Details

  • Part Number
    BPW21R
  • Manufacturer
    Vishay Intertechnology
  • Description
    Silicon Photodiode

Applications

  • Application
    Sensor in exposure and color measuring purposes

General Parameters

  • Breakdown Voltage
    10 V
  • Dark Resistance :
    38 GOhms
  • Detector Sensitivity :
    ±50 Degree (Angle of half sensitivity)
  • Fall Time
    3 µs
  • Forward Voltage
    1 to 1.3 V
  • Module
    No
  • Package
    TO-5, Leaded
  • Package Type
    TO-Can, Leaded
  • Photodetector Type
    PN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    420 to 675 nm
  • Photodiode Material
    Silicon
  • Power Dissipation
    300 mW
  • Reverse Current
    4.5 to 9 µA
  • Reverse Voltage
    10 V
  • Rise/Fall Time
    3.1 µs (Rise), 3 µs (Fall)
  • RoHs
    Yes
  • Short Circuit Current
    4.5 to 9 µA
  • Spectral Band
    Visible
  • Capacitance
    1.2 to 400 pF
  • Dark Current
    2 to 30 nA (Reverse)
  • Rise Time
    3.1 µs
  • Note
    Open circuit voltage: 280 to 450 mV

Physical Properties

  • Active Area
    7.5 mm2
  • Active Area Diameter
    8.13 mm

Temperature

  • Operating Temperature display
    -40 to 125 Degree C
  • Storage Temperature
    -40 to 125 Degree C
  • Temperature Coefficient
    -2 mV/K, 0.1 %/K

Technical Documents

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