TEMD1000

Photodiode by Vishay Intertechnology

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The TEMD1000 from Vishay Intertechnology is a Photodiode with Wavelength Range 790 to 1050 nm, Capacitance 1.8 pF, Dark Current 1 to 10 nA, Responsivity/Photosensitivity 0.55 to 0.6 A/W, Rise Time 4 ns. More details for TEMD1000 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TEMD1000
  • Manufacturer
    Vishay Intertechnology
  • Description
    Silicon PIN Photodiode from 790 to 1050 nm

Applications

  • Application
    High speed detector for infrared radiation, Infrared remote control and free air data transmission systems

General Parameters

  • Breakdown Voltage
    60 V
  • Configuration
    Single
  • Detector Sensitivity :
    ±15 Degree (Angle of half sensitivity)
  • Fall Time
    4 ns
  • Forward Voltage
    1 to 1.3 V
  • Module
    No
  • Package
    Surface Mount
  • Package Type
    Surface Mount
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    790 to 1050 nm
  • Photodiode Material
    Silicon
  • Power Dissipation
    75 mW
  • Reverse Current
    6 to 13 µA
  • Reverse Voltage
    60 V
  • Rise/Fall Time
    4 ns
  • RoHs
    Yes
  • Spectral Band
    IR
  • Capacitance
    1.8 pF
  • Dark Current
    1 to 10 nA
  • Responsivity/Photosensitivity
    0.55 to 0.6 A/W
  • Rise Time
    4 ns

Physical Properties

  • Active Area
    0.23 mm2
  • Dimensions
    2.5 x 2 x 2.7 mm (L x W x H)

Temperature

  • Operating Temperature display
    -40 to 100 Degree C
  • Storage Temperature
    -40 to 85 Degree C
  • Temperature Coefficient
    0.2 %/K

Technical Documents

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