VEMD1160X01

Photodiode by Vishay Intertechnology

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The VEMD1160X01 from Vishay Intertechnology is a Photodiode with Wavelength Range 700 to 1070 nm, Capacitance 1.8 to 3.8 pF, Dark Current 0.01 to 5 nA, Rise Time 60 ns. More details for VEMD1160X01 can be seen below.

Product Specifications

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Product Details

  • Part Number
    VEMD1160X01
  • Manufacturer
    Vishay Intertechnology
  • Description
    Silicon PIN Photodiode from 700 to 1070 nm

Applications

  • Application
    High speed photo detector, Small signal detection, Proximity sensors

General Parameters

  • Breakdown Voltage
    20 V
  • Configuration
    Single
  • Detector Sensitivity :
    ±70 Degree (Angle of half sensitivity)
  • Fall Time
    80 ns
  • Forward Voltage
    0.9 to 1.1 V
  • Module
    No
  • Package
    Surface Mount
  • Package Type
    Surface Mount
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    700 to 1070 nm
  • Photodiode Material
    Silicon
  • Power Dissipation
    215 mW
  • Reverse Current
    1.4 to 3 µA
  • Reverse Voltage
    20 V
  • Rise/Fall Time
    80 ns (Fall), 60 ns (Rise)
  • RoHs
    Yes
  • Short Circuit Current
    1.8 µA
  • Spectral Band
    Visible
  • Capacitance
    1.8 to 3.8 pF
  • Dark Current
    0.01 to 5 nA
  • Rise Time
    60 ns

Physical Properties

  • Active Area
    0.23 mm2
  • Dimensions
    2 x 1.25 x 0.85 mm (L x W x H)

Temperature

  • Operating Temperature display
    -40 to 110 Degree C
  • Storage Temperature
    -40 to 110 Degree C
  • Temperature Coefficient
    0.1 %/K

Technical Documents

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