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VEMD6060X01

Photodiode by Vishay Intertechnology
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The VEMD6060X01 from Vishay Intertechnology is a Photodiode with Wavelength Range 380 to 1070 nm, Capacitance 4.8 to 11 pF, Dark Current 0.03 to 5 nA, Rise Time 60 ns. More details for VEMD6060X01 can be seen below.

Product Specifications View similar products

Product Details

  • Part Number
    VEMD6060X01
  • Manufacturer
    Vishay Intertechnology
  • Description
    Silicon PIN photodiode from 380 to 1070 nm

Applications

  • Application
    High speed photo detector, Small signal detection, Proximity sensors

General Parameters

  • Breakdown Voltage
    20 V
  • Configuration
    Single
  • Detector Sensitivity
    ±70 Degree (Angle of half sensitivity)
  • Fall Time
    50 ns
  • Forward Voltage
    0.85 to 1.1 V
  • Package
    Surface Mount
  • Package Type
    Surface Mount
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    380 to 1070 nm
  • Photodiode Material
    Silicon
  • Power Dissipation
    215 mW
  • Reverse Current
    3.5 to 7 µA
  • Reverse Voltage
    20 V
  • RoHs
    Yes
  • Short Circuit Current
    5 µA
  • Spectral Band
    VIS-NIR
  • Capacitance
    4.8 to 11 pF
  • Dark Current
    0.03 to 5 nA
  • Rise Time
    60 ns

Physical Properties

  • Active Area
    0.85 mm2
  • Dimensions
    4 x 2 x 1.05 mm (L x W x H)

Temperature

  • Operating Temperature display
    -40 to 110 Degree C
  • Storage Temperature
    -40 to 110 Degree C
  • Temperature Coefficient
    0.1 %/K

Technical Documents
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