VEMD8080

Photodiode by Vishay Intertechnology

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The VEMD8080 from Vishay Intertechnology is a Silicon PIN Photodiode that operates at a peak wavelength of 850 nm. It is a low-profile surface-mount device (SMD) including the chip with a 4.5 mm2 sensitive area detecting visible and near-infrared radiation. It has a forward voltage of 1.2 V, a reverse dark current of 0.2 nA, and spectral bandwidth from 350 to 1100 nm. This photodiode is available in a surface-mount package that measures 4.8 x 2.5 x 0.48 mm.

Product Specifications

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Product Details

  • Part Number
    VEMD8080
  • Manufacturer
    Vishay Intertechnology
  • Description
    Silicon PIN Photodiode for Wearable Applications

Applications

  • Application
    High Speed Photo Detector, Wearables

General Parameters

  • Breakdown Voltage
    20 V
  • Detector Sensitivity :
    ±65 Degree (Angle of half sensitivity)
  • Fall Time
    30 to 70 ns
  • Forward Voltage
    1.2 to 1.6 V
  • Module
    No
  • Package
    Tape & Reel
  • Package Type
    Surface Mount
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    350 to 1100 nm
  • Photodiode Material
    Silicon
  • Reverse Current
    3.4 to 33 µA
  • Reverse Voltage
    20 V
  • Rise/Fall Time
    30 to 70 ns
  • RoHs
    Yes
  • Short Circuit Current
    32 µA
  • Spectral Band
    Visible
  • Capacitance
    42 pF
  • Dark Current
    0.2 nA
  • Rise Time
    30 to 70 ns

Physical Properties

  • Active Area
    4.6 mm2
  • Dimensions
    4.8 x 2.5 x 0.48 mm (L x W x H)

Temperature

  • Operating Temperature display
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 85 Degree C
  • Temperature Coefficient
    -3 mV/K

Technical Documents

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