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AP1608P1C

Phototransistor by kingbrightusa
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The AP1608P1C from kingbrightusa is a Phototransistor with Collector Emitter Voltage (Breakdown) 30 V, Collector-Dark Current 100 nA, Emitter Collector Voltage(Breakdown) 5 V, On-State Collector Current 0.1 to 0.3 mA, Power Dissipation 100 mW. More details for AP1608P1C can be seen below.

Product Specifications View similar products

Product Details

  • Part Number
    AP1608P1C
  • Manufacturer
    kingbrightusa
  • Description
    1.6 x 0.8mm SMD NPN Phototransistor Chips

General Parameters

  • Fall Time
    15 us
  • Material
    Silicon
  • Mounting Type
    Surface Mount
  • Peak Wavelength Sensitivity
    940 nm
  • Phototransistor Type
    Phototransistor
  • Polarity
    NPN
  • Rise Time
    15 us
  • RoHs
    Yes
  • Collector Emitter Voltage (Breakdown)
    30 V
  • Collector-Dark Current
    100 nA
  • Emitter Collector Voltage(Breakdown)
    5 V
  • On-State Collector Current
    0.1 to 0.3 mA
  • Power Dissipation
    100 mW
  • Wavelength(Spectral Sensitivity)
    420 to 1120 nm

Physical Properties

  • Dimension
    1.6 x 0.8 mm

Temperature

  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature display
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents
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