The AP1608P1C from Kingbright USA is a Silicon Phototransistor that has a peak sensitivity wavelength of 940 nm. It has a spectral bandwidth of 420 nm - 1120 nm and an angle of half sensitivity of 150 deg. This halogen-free phototransistor has a Collector-to-Emitter breakdown voltage of 30 V (minimum) with a saturation voltage of 0.8 V (maximum) and an Emitter-to-Collector breakdown voltage of 5 V (minimum). 

The AP1608P1C has a maximum Collector dark current of 100 nA and an on-state collector current of 0.3 mA. This phototransistor has a rise and fall time of 15 µS. It can be mechanically & spectrally matched to an infrared-emitting LED lamp and has a water-clear lens. This phototransistor is RoHS compliant and is available in a package that measures 1.6 mm x 0.8 mm x 1.1 mm. It is ideal for infrared-applied systems, optoelectronic switches, photodetector control circuits, and sensor technology applications.