Phototransistor by Kyoto Semiconductors

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The KPT801H from Kyoto Semiconductors is a Phototransistor with Collector Emitter Voltage (Breakdown) 20 V, Collector-Dark Current 100 to 200 nA, Collector Emitter Voltage(Saturation) 0.4 V, Emitter Collector Voltage(Breakdown) 5 V, Wavelength(Spectral Sensitivity) 400 to 1000 nm. More details for KPT801H can be seen below.

Product Specifications View similar products

Product Details

  • Part Number
  • Manufacturer
    Kyoto Semiconductors
  • Description
    Si Phototransistor


  • Application
    Optical Switches, Optical Encoders, Photo-isolators, Camera Stroboscopes, Infrared Sensors, Automatic Control Apparatus

General Parameters

  • Fall Time
    5 uS
  • Mounting Type
  • Package
  • Peak Wavelength Sensitivity
    800 nm
  • Phototransistor Type
  • Polarity
  • Rise Time
    5 uS
  • Collector Emitter Voltage (Breakdown)
    20 V
  • Collector-Dark Current
    100 to 200 nA
  • Collector Emitter Voltage(Saturation)
    0.4 V
  • Emitter Collector Voltage(Breakdown)
    5 V
  • Wavelength(Spectral Sensitivity)
    400 to 1000 nm
  • Note
    17 Degree Half Angle

Physical Properties

  • Photosensitive Area
    0.64 x 0.64 mm


  • Operating Temperature display
    -25 to 125 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents

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