Phototransistor by Light In Motion

Note: Your Quotation Request will be directed to Light In Motion.

The L14N1 from Light In Motion is a Phototransistor with Collector Emitter Voltage (Breakdown) 30 V, Collector Emitter Voltage(Saturation) 0.4 V, On-State Collector Current 1 mA, Power Dissipation 300 to 600 mW. More details for L14N1 can be seen below.

Product Specifications View similar products

Product Details

  • Part Number
  • Manufacturer
    Light In Motion

General Parameters

  • Collector base voltage
    40 V
  • Emitter base voltage
    5 V
  • Input Power(Irradiance)
    0.5 mW/cm2
  • Material
  • Mounting Type
    Through-Hole, Leaded
  • Package
  • Phototransistor Type
    Photo Transistor
  • Reception angle
    80 Degree
  • RoHs
  • Turn-off time
    5 us
  • Turn-on time
    5 us
  • Collector Emitter Voltage (Breakdown)
    30 V
  • Collector Emitter Voltage(Saturation)
    0.4 V
  • On-State Collector Current
    1 mA
  • Power Dissipation
    300 to 600 mW


  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature display
    -65 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

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