Phototransistor by Lumex

Note: Your Quotation Request will be directed to Lumex.

The OED-STR851C100-TR from Lumex is a Phototransistor with Collector Emitter Voltage (Breakdown) 30 V, Collector-Dark Current 100 nA, Collector Emitter Voltage(Saturation) 0.8 V, Emitter Collector Voltage(Breakdown) 5 V, Power Dissipation 100 mW. More details for OED-STR851C100-TR can be seen below.

Product Specifications View similar products

Product Details

  • Part Number
  • Manufacturer

General Parameters

  • Collector-Light Current
    0.1 to 0.3 mA
  • Fall Time
    3 µs
  • Mounting Type
    Surface Mount
  • Peak Wavelength Sensitivity
    940 nm
  • Phototransistor Type
    Photo Transistor
  • Rise Time
    3 µs
  • Collector Emitter Voltage (Breakdown)
    30 V
  • Collector-Dark Current
    100 nA
  • Collector Emitter Voltage(Saturation)
    0.8 V
  • Emitter Collector Voltage(Breakdown)
    5 V
  • Power Dissipation
    100 mW
  • Wavelength(Spectral Sensitivity)
    940 nm

Physical Properties

  • Dimension
    1 x 3 mm


  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature display
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents

Click to view more product details on manufacturer's website
Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.