Phototransistor by Marktech Optoelectronics

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The MTD8000N4-T from Marktech Optoelectronics is a Phototransistor that has a peak wavelength of 880 nm. It has a spectral sensitivity of 400 nm - 1100 nm and switching time (rise/fall) of 10 µs. This phototransistor has a light current of 3 mA and maximum dark current of 100 nA. It has a C-E saturation voltage of 0.2 V and angular response of ±12 deg. This phototransistor is available in a compact TO-18 metal can domed package that measures 19.7 (L) mm x 2.54 (Ø) mm and is ideal for optical switches, edge sensing, fiber optical communications, and smoke detector applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Marktech Optoelectronics
  • Description
    880 nm Phototransistor for Edge Sensing & Smoke Detector Applications


  • Application
    Optical Switches, Edge Sensing, Fiber Optical Communications, Smoke Detectors

General Parameters

  • Collector Current
    50 mA
  • Collector Emitter Current
    3 mA
  • Collector-Light Current
    3 mA
  • Fall Time
    10 µS
  • Material
  • Mounting Type
  • Package
    TO-18 Metal Can Domed
  • Peak Wavelength Sensitivity
    880 nm
  • Phototransistor Type
    Photo Transistor
  • Rise Time
    10 µS
  • RoHs
  • Collector Emitter Voltage (Breakdown)
    30 V
  • Collector-Dark Current
    100 nA
  • Collector Emitter Voltage(Saturation)
    0.2 V
  • Emitter Collector Voltage(Breakdown)
    5 V
  • Power Dissipation :
    150 mW
  • Wavelength(Spectral Sensitivity)
    400 to 1100 nm


  • Junction Temperature
    125 Degree C
  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature display
    -25 to 100 Degree C
  • Storage Temperature
    -40 to 125 Degree C

Technical Documents

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