MTD8600N-T

Phototransistor by Marktech Optoelectronics

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The MTD8600N-T from Marktech Optoelectronics is a Phototransistor with Collector Emitter Voltage (Breakdown) 30 V, Collector-Dark Current 100 nA, Collector Emitter Voltage(Saturation) 0.2 V, Emitter Collector Voltage(Breakdown) 5 V, Power Dissipation 250 mW. More details for MTD8600N-T can be seen below.

 Product Specifications

    Product Details

    • Part Number :
      MTD8600N-T
    • Manufacturer :
      Marktech Optoelectronics

    Applications

    • Application :
      Optical Switches, Optical Sensors, Edge Sensing, Smoke Detectors

    General Parameters

    • Collector Current :
      50 mA
    • Collector Emitter Current :
      3 mA
    • Collector-Light Current :
      3 mA
    • Fall Time :
      10 µS
    • Material :
      Metal
    • Mounting Type :
      Through-Hole
    • Package :
      TO-18 Metal Can Domed
    • Peak Wavelength Sensitivity :
      880 nm
    • Phototransistor Type :
      Photo Transistor
    • Rise Time :
      10 µS
    • RoHs :
      Yes
    • Collector Emitter Voltage (Breakdown) :
      30 V
    • Collector-Dark Current :
      100 nA
    • Collector Emitter Voltage(Saturation) :
      0.2 V
    • Emitter Collector Voltage(Breakdown) :
      5 V
    • Power Dissipation :
      250 mW
    • Wavelength(Spectral Sensitivity) :
      400 to 1100 nm

    Temperature

    • Junction Temperature :
      125 Degree C
    • Lead Soldering Temperature :
      260 Degree C
    • Operating Temperature display :
      -30 to 100 Degree C
    • Storage Temperature :
      -40 to 125 Degree C

    Technical Documents

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