Phototransistor by Marktech Optoelectronics

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The MTD8600N-T from Marktech Optoelectronics is a Photo Transistor that has a peak sensitivity wavelength of 880 nm. It has a spectral range of 400-1100 nm and a switching time (rise/fall) of 10 μs. This transistor has a Collector-Emitter current of 3 mA, C-E saturation voltage of 0.2 V and up to 100 nA of collector dark current. It is available in a TO-18 metal can package that measures Ø5.4 mm and is ideal for optical switches, optical sensors, edge sensing and smoke detector applications.

Product Specifications View similar products

Product Details

  • Part Number
  • Manufacturer
    Marktech Optoelectronics
  • Description
    880 nm Phototransistor for Sensing Applications


  • Application
    Optical Switches, Optical Sensors, Edge Sensing, Smoke Detectors

General Parameters

  • Collector Current
    50 mA
  • Collector Emitter Current
    3 mA
  • Collector-Light Current
    3 mA
  • Fall Time
    10 µS
  • Material
  • Mounting Type
  • Package
    TO-18 Metal Can Domed
  • Peak Wavelength Sensitivity
    880 nm
  • Phototransistor Type
    Photo Transistor
  • Rise Time
    10 µS
  • RoHs
  • Collector Emitter Voltage (Breakdown)
    30 V
  • Collector-Dark Current
    100 nA
  • Collector Emitter Voltage(Saturation)
    0.2 V
  • Emitter Collector Voltage(Breakdown)
    5 V
  • Power Dissipation
    250 mW
  • Wavelength(Spectral Sensitivity)
    400 to 1100 nm


  • Junction Temperature
    125 Degree C
  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature display
    -30 to 100 Degree C
  • Storage Temperature
    -40 to 125 Degree C

Technical Documents

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