MTD8600N-T

Phototransistor by Marktech Optoelectronics

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The MTD8600N-T from Marktech Optoelectronics is a Phototransistor with Collector Emitter Voltage (Breakdown) 30 V, Collector-Dark Current 100 nA, Collector Emitter Voltage(Saturation) 0.2 V, Emitter Collector Voltage(Breakdown) 5 V, Power Dissipation 250 mW. More details for MTD8600N-T can be seen below.

Product Specifications View similar products

Product Details

  • Part Number
    MTD8600N-T
  • Manufacturer
    Marktech Optoelectronics

Applications

  • Application
    Optical Switches, Optical Sensors, Edge Sensing, Smoke Detectors

General Parameters

  • Collector Current
    50 mA
  • Collector Emitter Current
    3 mA
  • Collector-Light Current
    3 mA
  • Fall Time
    10 µS
  • Material
    Metal
  • Mounting Type
    Through-Hole
  • Package
    TO-18 Metal Can Domed
  • Peak Wavelength Sensitivity
    880 nm
  • Phototransistor Type
    Photo Transistor
  • Rise Time
    10 µS
  • RoHs
    Yes
  • Collector Emitter Voltage (Breakdown)
    30 V
  • Collector-Dark Current
    100 nA
  • Collector Emitter Voltage(Saturation)
    0.2 V
  • Emitter Collector Voltage(Breakdown)
    5 V
  • Power Dissipation
    250 mW
  • Wavelength(Spectral Sensitivity)
    400 to 1100 nm

Temperature

  • Junction Temperature
    125 Degree C
  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature display
    -30 to 100 Degree C
  • Storage Temperature
    -40 to 125 Degree C

Technical Documents

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