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NTE30133

Phototransistor by NTE Electronics, Inc
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The NTE30133 from NTE Electronics, Inc is a Phototransistor with Collector Emitter Voltage (Breakdown) 30 V, Collector-Dark Current 100 nA, Collector Emitter Voltage(Saturation) 0.4 V, Emitter Collector Voltage(Breakdown) 5 V, On-State Collector Current 0.1 to 1.5 mA. More details for NTE30133 can be seen below.

Product Specifications View similar products

Product Details

  • Part Number
    NTE30133
  • Manufacturer
    NTE Electronics, Inc

Applications

  • Application
    Miniature Switch, Counters and Sorter, Position Sensorm, Infrared Applied System

General Parameters

  • Collector Current
    20 mA
  • Material
    Silicon
  • Mounting Type
    Through-Hole
  • Phototransistor Type
    Photo Transistor
  • Polarity
    NPN
  • Rise Time
    15 us
  • RoHs
    Yes
  • Collector Emitter Voltage (Breakdown)
    30 V
  • Collector-Dark Current
    100 nA
  • Collector Emitter Voltage(Saturation)
    0.4 V
  • Emitter Collector Voltage(Breakdown)
    5 V
  • On-State Collector Current
    0.1 to 1.5 mA
  • Power Dissipation
    75 mW
  • Wavelength(Spectral Sensitivity)
    940 nm

Temperature

  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature display
    -25 to 85 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents
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