NTE3031

Phototransistor by NTE Electronics, Inc

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The NTE3031 from NTE Electronics, Inc is a Phototransistor with Collector Emitter Voltage (Breakdown) 30 V, Collector-Dark Current 100 nA, Collector Emitter Voltage(Saturation) 0.2 V, Emitter Collector Voltage(Breakdown) 5 V, Power Dissipation 150 mW. More details for NTE3031 can be seen below.

 Product Specifications

    Product Details

    • Part Number :
      NTE3031
    • Manufacturer :
      NTE Electronics, Inc

    General Parameters

    • Collector Current :
      40 mA
    • Collector-Light Current :
      1 mA
    • Fall Time :
      6 us
    • Material :
      Silicon
    • Mounting Type :
      Through-Hole
    • Package :
      TO46 Flat Lens
    • Phototransistor Type :
      Photo Transistor
    • Polarity :
      NPN
    • Rise Time :
      6 us
    • RoHs :
      Yes
    • Collector Emitter Voltage (Breakdown) :
      30 V
    • Collector-Dark Current :
      100 nA
    • Collector Emitter Voltage(Saturation) :
      0.2 V
    • Emitter Collector Voltage(Breakdown) :
      5 V
    • Power Dissipation :
      150 mW

    Temperature

    • Lead Soldering Temperature :
      260 Degree C
    • Operating Temperature display :
      -55 to 125 Degree C
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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