NTE3035A

Phototransistor by NTE Electronics, Inc

Note: Your Quotation Request will be directed to NTE Electronics, Inc.

The NTE3035A from NTE Electronics, Inc is a Phototransistor with Collector Emitter Voltage (Breakdown) 60 V, Collector-Dark Current 100 nA, Collector Emitter Voltage(Saturation) 0.75 to 1 V, Power Dissipation 150 mW, Wavelength(Spectral Sensitivity) 800 nm. More details for NTE3035A can be seen below.

Product Specifications View similar products

Product Details

  • Part Number
    NTE3035A
  • Manufacturer
    NTE Electronics, Inc

General Parameters

  • Collector-Light Current
    5 to 25 mA
  • Material
    Silicon
  • Mounting Type
    Through-Hole
  • Phototransistor Type
    Photo Transistor
  • Polarity
    NPN
  • RoHs
    Yes
  • Turn-off time
    150 us
  • Turn-on time
    125 us
  • Collector Emitter Voltage (Breakdown)
    60 V
  • Collector-Dark Current
    100 nA
  • Collector Emitter Voltage(Saturation)
    0.75 to 1 V
  • Power Dissipation
    150 mW
  • Wavelength(Spectral Sensitivity)
    800 nm

Temperature

  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature display
    -40 to 100 Degree C
  • Storage Temperature
    -40 to 100 Degree C

Technical Documents

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