NTE3036

Phototransistor by NTE Electronics, Inc

Note: Your Quotation Request will be directed to NTE Electronics, Inc.

The NTE3036 from NTE Electronics, Inc is a Phototransistor with Collector Emitter Voltage (Breakdown) 50 V, Collector-Dark Current 10 to 100 nA, Collector Emitter Voltage(Saturation) 0.6 to 1 V, Emitter Collector Voltage(Breakdown) 10 to 15.5 V, Power Dissipation 250 mW. More details for NTE3036 can be seen below.

Product Specifications View similar products

Product Details

  • Part Number
    NTE3036
  • Manufacturer
    NTE Electronics, Inc

Applications

  • Application
    industrial inspection, processing and control, counter, sorters, switching, logic circuits

General Parameters

  • Collector base voltage
    50 to 100 V
  • Collector Current
    250 mA
  • Collector-Light Current
    12 to 20 mA
  • Fall Time
    151 us
  • Material
    Silicon
  • Mounting Type
    Through-Hole
  • Package
    TO18 Dome Lens
  • Phototransistor Type
    Photodarlington
  • Polarity
    NPN
  • Rise Time
    151 us
  • RoHs
    Yes
  • Turn-off time
    65 to 150 us
  • Turn-on time
    15 to 100 us
  • Collector Emitter Voltage (Breakdown)
    50 V
  • Collector-Dark Current
    10 to 100 nA
  • Collector Emitter Voltage(Saturation)
    0.6 to 1 V
  • Emitter Collector Voltage(Breakdown)
    10 to 15.5 V
  • Power Dissipation
    250 mW

Temperature

  • Operating Temperature display
    -65 to 200 Degree C
  • Storage Temperature
    -65 to 200 Degree C

Technical Documents

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