NTE3123

Phototransistor by NTE Electronics, Inc

Note: Your Quotation Request will be directed to NTE Electronics, Inc.

The NTE3123 from NTE Electronics, Inc is a Phototransistor with Collector Emitter Voltage (Breakdown) 35 V, Collector-Dark Current 10 uA, Collector Emitter Voltage(Saturation) 1 V, On-State Collector Current 0.2 to 0.8 mA, Power Dissipation 75 mW. More details for NTE3123 can be seen below.

Product Specifications View similar products

Product Details

  • Part Number
    NTE3123
  • Manufacturer
    NTE Electronics, Inc

Applications

  • Application
    VCRs, Optoelectronic Swithes

General Parameters

  • Collector Current
    50 mA
  • Collector-Light Current
    0.2 mA
  • Fall Time
    300 to 1500 us
  • Material
    Silicon
  • Mounting Type
    Through-Hole
  • Phototransistor Type
    Photodarlington
  • Polarity
    NPN
  • Rise Time
    400 to 2000 us
  • RoHs
    Yes
  • Collector Emitter Voltage (Breakdown)
    35 V
  • Collector-Dark Current
    10 uA
  • Collector Emitter Voltage(Saturation)
    1 V
  • On-State Collector Current
    0.2 to 0.8 mA
  • Power Dissipation
    75 mW
  • Wavelength(Spectral Sensitivity)
    860 nm

Temperature

  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature display
    -25 to 85 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents

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