Phototransistor by Optrans America

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The PTF080D1 from Optrans America is a Photo Transistor that has a peak sensitivity wavelength of 880 nm. It has a spectral range of 450 - 1050 nm and a switching time (rise/fall) of 20 μs. This transistor has a Collector-Emitter current of 1.5 mA, C-E saturation voltage of 0.2 V, and up to 100 nA of collector dark current. It is available in a Through-Hole package and is ideal for optical switches, edge sensing, fiber optical communications, and smoke detectors.

Product Specifications View similar products

Product Details

  • Part Number
  • Manufacturer
    Optrans America
  • Description
    450 nm - 1050 nm, Phototransistor for Optical Switches & Edge Sensing Applications


  • Application
    Optical Switches, Edge Sensing, Fiber Optical Communications, Smoke Detectors

General Parameters

  • Collector Current
    50 mA
  • Collector Emitter Current
    1.5 mA
  • Collector-Light Current
    1.5 mA
  • Fall Time
    20 µS
  • Mounting Type
  • Peak Wavelength Sensitivity
    880 nm
  • Phototransistor Type
    Photo Transistor
  • Rise Time
    20 µS
  • Collector Emitter Voltage (Breakdown)
    30 V
  • Collector-Dark Current
    100 nA
  • Collector Emitter Voltage(Saturation)
    0.2 V
  • Emitter Collector Voltage(Breakdown)
    5 V
  • Power Dissipation
    200 mW
  • Wavelength(Spectral Sensitivity)
    450 to 1050 nm


  • Junction Temperature
    100 Degree C
  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature display
    -25 to 85 Degree C
  • Storage Temperature
    -30 to 100 Degree C

Technical Documents

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