XRNI12W

Phototransistor by SunLED

Note: Your Quotation Request will be directed to SunLED.

The XRNI12W from SunLED is a Phototransistor with Collector Emitter Voltage (Breakdown) 30 V, Collector-Dark Current 100 nA, Collector Emitter Voltage(Saturation) 0.8 V, Emitter Collector Voltage(Breakdown) 5 V, On-State Collector Current 0.5 to 2.5 mA. More details for XRNI12W can be seen below.

 Product Specifications

    Product Details

    • Part Number :
      XRNI12W
    • Manufacturer :
      SunLED

    General Parameters

    • Collector-Light Current :
      0.5 to 2.5 mA
    • Fall Time :
      15 µs
    • Mounting Type :
      Through-Hole
    • Phototransistor Type :
      Photo Transistor
    • Rise Time :
      15 µs
    • RoHs :
      Yes
    • Collector Emitter Voltage (Breakdown) :
      30 V
    • Collector-Dark Current :
      100 nA
    • Collector Emitter Voltage(Saturation) :
      0.8 V
    • Emitter Collector Voltage(Breakdown) :
      5 V
    • On-State Collector Current :
      0.5 to 2.5 mA
    • Power Dissipation :
      100 mW

    Temperature

    • Lead Soldering Temperature :
      260 Degree C
    • Operating Temperature display :
      -40 to 85 Degree C
    • Storage Temperature :
      -40 to 85 Degree C

    Technical Documents

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