XRNI82B

Phototransistor by SunLED

Note: Your Quotation Request will be directed to SunLED.

The XRNI82B from SunLED is a Phototransistor with Collector Emitter Voltage (Breakdown) 30 V, Collector-Dark Current 100 nA, Collector Emitter Voltage(Saturation) 0.4 V, Emitter Collector Voltage(Breakdown) 5 V, Power Dissipation 100 mW. More details for XRNI82B can be seen below.

Product Specifications View similar products

Product Details

  • Part Number
    XRNI82B
  • Manufacturer
    SunLED

General Parameters

  • Collector-Light Current
    0.4 to 1 mA
  • Fall Time
    18 µs
  • Mounting Type
    Through-Hole
  • Phototransistor Type
    Photo Transistor
  • Polarity
    NPN
  • Rise Time
    16 µs
  • RoHs
    Yes
  • Collector Emitter Voltage (Breakdown)
    30 V
  • Collector-Dark Current
    100 nA
  • Collector Emitter Voltage(Saturation)
    0.4 V
  • Emitter Collector Voltage(Breakdown)
    5 V
  • Power Dissipation
    100 mW

Temperature

  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature display
    -55 to 100 Degree C
  • Storage Temperature
    -55 to 100 Degree C

Technical Documents

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