OP535B

Phototransistor by TT Electronics

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The OP535B from TT Electronics is a Phototransistor with Collector Emitter Voltage (Breakdown) 15 V, Collector-Dark Current 100 nA, Collector Emitter Voltage(Saturation) 1.10 V, Emitter Collector Voltage(Breakdown) 2 V, On-State Collector Current 3.5 to 32.0 mA. More details for OP535B can be seen below.

Product Specifications View similar products

Product Details

  • Part Number
    OP535B
  • Manufacturer
    TT Electronics

General Parameters

  • Input Power(Irradiance)
    0.1 mW/cm2
  • Material
    Silicon
  • Mounting Type
    Through-Hole
  • Package
    T-1 0.050" Lead Spacing
  • Phototransistor Type
    Photodarlington
  • Polarity
    NPN
  • RoHs
    Yes
  • Technology
    GaAs, GaAIAs
  • Viewing Angle
    25 Degree
  • Collector Emitter Voltage (Breakdown)
    15 V
  • Collector-Dark Current
    100 nA
  • Collector Emitter Voltage(Saturation)
    1.10 V
  • Emitter Collector Voltage(Breakdown)
    2 V
  • On-State Collector Current
    3.5 to 32.0 mA
  • Power Dissipation
    100 mW
  • Wavelength(Spectral Sensitivity)
    935 nm

Temperature

  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature display
    -40 to 100 Degree C
  • Storage Temperature
    -40 to 100 Degree C

Technical Documents

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