OP580DA

Phototransistor by TT Electronics

Note: Your Quotation Request will be directed to TT Electronics.

The OP580DA from TT Electronics is a Phototransistor with Collector Emitter Voltage (Breakdown) 35 V, Collector-Dark Current 1 µA, Collector Emitter Voltage(Saturation) 1.7 V, Emitter Collector Voltage(Breakdown) 5 V, On-State Collector Current 10 mA. More details for OP580DA can be seen below.

Product Specifications View similar products

Product Details

  • Part Number
    OP580DA
  • Manufacturer
    TT Electronics

Applications

  • Application
    Non-contact position sensing, Datum detection RoHS, Machine automation, Optical encoders

General Parameters

  • Collector Current
    32 mA
  • Fall Time
    50 µs
  • Input Power(Irradiance)
    0.15 mW/cm2
  • Material
    Silicon
  • Mounting Type
    Surface Mount
  • Package
    PLCC-2
  • Phototransistor Type
    Photodarlington
  • Polarity
    NPN
  • Rise Time
    50 µs
  • RoHs
    Yes
  • Technology
    GaAs, GaAIAs
  • Viewing Angle
    100 Degree
  • Collector Emitter Voltage (Breakdown)
    35 V
  • Collector-Dark Current
    1 µA
  • Collector Emitter Voltage(Saturation)
    1.7 V
  • Emitter Collector Voltage(Breakdown)
    5 V
  • On-State Collector Current
    10 mA
  • Power Dissipation
    100 mW
  • Wavelength(Spectral Sensitivity)
    935 nm

Temperature

  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature display
    -25 to 85 Degree C
  • Storage Temperature
    -40 to 100 Degree C

Technical Documents

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