OP755C

Phototransistor by TT Electronics

Note: Your Quotation Request will be directed to TT Electronics.

The OP755C from TT Electronics is a Phototransistor with Collector Emitter Voltage (Breakdown) 30 V, Collector-Dark Current 100 nA, Collector Emitter Voltage(Saturation) 0.40 V, Emitter Collector Voltage(Breakdown) 5 V, On-State Collector Current 0.85 to 2.8 mA. More details for OP755C can be seen below.

 Product Specifications

    Product Details

    • Part Number :
      OP755C
    • Manufacturer :
      TT Electronics

    Applications

    • Application :
      Applications requiring wide receiving angle, Applications requiring PCBoard mounting, Space-limited applications, Optical switches, Optical interrupt detectors, Optical encoders, Non-contact position sensing, Machine automation

    General Parameters

    • Input Power(Irradiance) :
      1 mW/cm2
    • Material :
      Silicon
    • Mounting Type :
      Through-Hole
    • Package :
      Sidelooker 0.100" Base
    • Phototransistor Type :
      Photo Transistor
    • Polarity :
      NPN
    • RoHs :
      Yes
    • Technology :
      GaAs, GaAIAs
    • Viewing Angle :
      60 Degree
    • Collector Emitter Voltage (Breakdown) :
      30 V
    • Collector-Dark Current :
      100 nA
    • Collector Emitter Voltage(Saturation) :
      0.40 V
    • Emitter Collector Voltage(Breakdown) :
      5 V
    • On-State Collector Current :
      0.85 to 2.8 mA
    • Power Dissipation :
      100 mW
    • Wavelength(Spectral Sensitivity) :
      935 nm

    Temperature

    • Lead Soldering Temperature :
      260 Degree C
    • Operating Temperature display :
      -40 to 100 Degree C
    • Storage Temperature :
      -40 to 100 Degree C

    Technical Documents

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