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BPV11F

Phototransistor by Vishay Intertechnology
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The BPV11F from Vishay Intertechnology is a Phototransistor with Collector Emitter Voltage (Breakdown) 70 V, Collector-Dark Current 1 to 50 nA, Power Dissipation 150 mW, Wavelength(Spectral Sensitivity) 900 to 980 nm. More details for BPV11F can be seen below.

Product Specifications View similar products

Product Details

  • Part Number
    BPV11F
  • Manufacturer
    Vishay Intertechnology

Applications

  • Application
    Detector for industrial electronic circuitry, measurement and control

General Parameters

  • Collector base voltage
    80 V
  • Collector Current
    50 mA
  • Collector-Light Current
    3 to 9 mA
  • Emitter base voltage
    5 V
  • Material
    Silicon
  • Mounting Type
    Leaded
  • Package
    T-1¾
  • Peak Wavelength Sensitivity
    930 nm
  • Phototransistor Type
    Photo Transistor
  • Polarity
    NPN
  • RoHs
    Yes
  • Thermal resistance
    350 K/W
  • Turn-off time
    5 µs
  • Turn-on time
    6 µs
  • Collector Emitter Voltage (Breakdown)
    70 V
  • Collector-Dark Current
    1 to 50 nA
  • Power Dissipation
    150 mW
  • Wavelength(Spectral Sensitivity)
    900 to 980 nm

Physical Properties

  • Dimension
    Ø 5 mm

Temperature

  • Junction Temperature
    100 Degree C
  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature display
    -40 to 100 Degree C
  • Storage Temperature
    -40 to 100 Degree C

Technical Documents
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