VEMT3700F

Phototransistor by Vishay Intertechnology

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The VEMT3700F from Vishay Intertechnology is a Phototransistor with Collector Emitter Voltage (Breakdown) 70 V, Collector-Dark Current 1 to 200 nA, Emitter Collector Voltage(Breakdown) 5 V, Power Dissipation 100 mW, Wavelength(Spectral Sensitivity) 870 to 1050 nm. More details for VEMT3700F can be seen below.

 Product Specifications

    Product Details

    • Part Number :
      VEMT3700F
    • Manufacturer :
      Vishay Intertechnology

    Applications

    • Application :
      Photo interrupters, Miniature switches, Counters, Encoders, Position sensors

    General Parameters

    • Collector Current :
      50 mA
    • Collector-Light Current :
      0.25 to 0.5 mA
    • Material :
      Silicon
    • Mounting Type :
      Surface Mount
    • Package :
      PLCC-2
    • Peak Wavelength Sensitivity :
      940 nm
    • Phototransistor Type :
      Photo Transistor
    • Polarity :
      NPN
    • RoHs :
      Yes
    • Thermal resistance :
      400 K/W
    • Turn-off time :
      2 µs
    • Turn-on time :
      6 µs
    • Collector Emitter Voltage (Breakdown) :
      70 V
    • Collector-Dark Current :
      1 to 200 nA
    • Emitter Collector Voltage(Breakdown) :
      5 V
    • Power Dissipation :
      100 mW
    • Wavelength(Spectral Sensitivity) :
      870 to 1050 nm

    Physical Properties

    • Dimension :
      3.5 x 2.8 x 1.75 mm

    Temperature

    • Junction Temperature :
      100 Degree C
    • Lead Soldering Temperature :
      260 Degree C
    • Operating Temperature display :
      -40 to 100 Degree C
    • Storage Temperature :
      -40 to 100 Degree C

    Technical Documents

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