VEMT3700F

Phototransistor by Vishay Intertechnology

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The VEMT3700F from Vishay Intertechnology is a Phototransistor with Collector Emitter Voltage (Breakdown) 70 V, Collector-Dark Current 1 to 200 nA, Emitter Collector Voltage(Breakdown) 5 V, Power Dissipation 100 mW, Wavelength(Spectral Sensitivity) 870 to 1050 nm. More details for VEMT3700F can be seen below.

Product Specifications View similar products

Product Details

  • Part Number
    VEMT3700F
  • Manufacturer
    Vishay Intertechnology

Applications

  • Application
    Photo interrupters, Miniature switches, Counters, Encoders, Position sensors

General Parameters

  • Collector Current
    50 mA
  • Collector-Light Current
    0.25 to 0.5 mA
  • Material
    Silicon
  • Mounting Type
    Surface Mount
  • Package
    PLCC-2
  • Peak Wavelength Sensitivity
    940 nm
  • Phototransistor Type
    Photo Transistor
  • Polarity
    NPN
  • RoHs
    Yes
  • Thermal resistance
    400 K/W
  • Turn-off time
    2 µs
  • Turn-on time
    6 µs
  • Collector Emitter Voltage (Breakdown)
    70 V
  • Collector-Dark Current
    1 to 200 nA
  • Emitter Collector Voltage(Breakdown)
    5 V
  • Power Dissipation
    100 mW
  • Wavelength(Spectral Sensitivity)
    870 to 1050 nm

Physical Properties

  • Dimension
    3.5 x 2.8 x 1.75 mm

Temperature

  • Junction Temperature
    100 Degree C
  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature display
    -40 to 100 Degree C
  • Storage Temperature
    -40 to 100 Degree C

Technical Documents

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