FPA 640x512_P15-1.9-TE2

SWIR Sensor by ANDANTA

Note: Your Quotation Request will be directed to ANDANTA.

The FPA 640x512_P15-1.9-TE2 from ANDANTA is an InGaAs SWIR Sensor that has a spectral range of 1.1 µm - 1.9 µm. It has a quantum efficiency fill factor (QEFF) above 70 % (at 1700 nm) and an actual pixel array of 640 (H) x 512 (V) pixels. This SWIR sensor has a pixel operability of 99 % and pixel pitch of 15 µm. It has an effective pixel array of 636 (H) x 508 (V) pixels and image size of 9.6 mm x 7.68 mm. This SWIR sensor has a charge capacity of 0.041 Me- (at high gain, 46.2 µV/e-), 0.118 Me- (at mid gain, 16.2 µV/e-), and 1.38 Me- (at low gain, 1.39 µV/e-).

The FPA 640x512_P15-1.9-TE2 has a planar InGaAs PIN sensor technology with dark current of up to 100 fA and readout noise below 35 e-RMS. This SWIR sensor has a response nonuniformity of 10 % and response nonlinearity of 4 %. It has an output swing of 2.25 V and a minimum integration period of up to 1 µs. This SWIR sensor has a built-in temperature sensor with an embedded thermoelectric cooler. It has three readout modes: snapshot ITR/IWR & IMRO and 2,4, or 8 outputs with a pixel rate of less than 18 MHz.

The FPA 640x512_P15-1.9-TE2 is available in a 28-pin metal SDIP package that measures 36.1 mm (L) x 25.4 mm (W) x 7.3 mm (T) and is ideal for Shortwave-Infrared Imaging, hyper- / multi-spectral imaging, semiconductor inspection/process monitoring, waste recycling, medical science & biology, see through fog/smoke, ice/slush/moisture mapping, high-speed industrial thermal imaging, laser beam profiling, and mineral identification applications.

Product Specifications

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Product Details

  • Part Number
    FPA 640x512_P15-1.9-TE2
  • Manufacturer
    ANDANTA
  • Description
    1.1 µm - 1.9 µm, InGaAs SWIR Sensor for Thermal Imaging Applications

General Parameters

  • SWIR Type
    InGaAs SWIR Sensor
  • Sensor Technology
    Planar InGaAs PIN
  • Total Number of Pixels
    640 x 512 pixels
  • Sensor Type
    Area Scan Sensor
  • Number of Effective Pixels
    636 x 508
  • Dark Current
    <100 fA
  • Pixel Size(H x V)
    15 x 15 µm
  • Pixel Pitch
    15 µm
  • Cooling
    Two-stage TE-Cooled
  • Image Size
    9.6 x 7.68 mm
  • Package Type
    DIP
  • Package
    28-pin Metal SDIP
  • Array Operability
    >99%
  • Maximum Pixel Rate
    18 MHz
  • Output Signal Swing
    2.25 V
  • Photoresponse Nonuniformity
    <10%
  • Power Consumption
    200 mW
  • Quantum Efficiency :
    >70%
  • Readout Noise
    <35 e-
  • Resolution
    640 (H) x 512 (V)
  • Saturation Charge
    0.041 to 1.380 Me- (Charge Capacity)
  • Spectral Response Range
    1.1 to 1.9 µm
  • Note
    Integration Time: 3.33 ms

Applications

  • Application
    Shortwave-Infrared Imaging, Hyper-/Multi-Spectral Imaging, Semiconductor Inspection / Process Monitoring, Waste Recycling, Medical Science and Biology, Ice/Slush/Moisture Mapping, High-Speed Industrial Thermal Imaging, See through Fog/Smoke, Laser Beam Profiling, Mineral Identification

Physical Properties

  • Dimensions
    36.1 x 25.4 x 7.3 mm (L x W x T)
  • Weight
    19.5 g

Environmental Conditions

  • Operating Temperature
    -40 to 71 Degree C
  • Storage Temperature
    -40 to 80 Degree C

Technical Documents

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