FPA0640P15F-17-T1X

Note: Your Quotation Request will be directed to Chunghwa Leading Photonics Tech (CLPT).

The FPA0640P15F-17-T1X from Chunghwa Leading Photonics Tech (CLPT) is an InGaAs NIR Image Sensor with a spectral range of 0.9 µm - 1.7 µm. It has a quantum efficiency fill factor (QEFF) above 70 % (at 1 µm - 1.6 µm) and an effective pixel array of 636 (H) x 508 (V). This SWIR sensor uses planar InGaAs PIN sensor technology with pixel operability up to 99%. It has an image size of 9.6 mm x 7.68 mm and a pixel pitch of 15 µm.

The FPA0640P15F-17-T1X has a dark current of up to 20 fA and readout noise floor of less than 35 e-. It has a charge capacity of 0.041 Me- (at high gain, 46.2 µV/e-), 0.118 Me- (at mid gain, 16.2 µV/e-), and 1.380 Me- (at low gain, 1.39 µV/e-). This SWIR sensor has a noise equivalent irradiance of less than 1.8 x 1010 ph#/cm2-s and mean detectivity greater than 3.5 x 1012 cm-&radicHz/W (at 1.55 µm). It has an output swing of 2.25 V and a minimum integration period of less than 1 µs.

The FPA0640P15F-17-T1X has a built-in temperature sensor with single-stage high current thermoelectric cooler. It has 2, 4, or 8 outputs with up to 18 MHz pixel rate and three readout modes: snapshot ITR/IWR & IMRO. This SWIR sensor is available in a 28 -pin metal SDIP package that measures 36.1 mm (L) x 25.4 mm (W) x 7.3 mm (T) and is ideal for near-infrared imaging, covert surveillance, semiconductor/solar panel inspection, medical science & biology, fiber optic telecommunication, see through fog/smoke, ice/slush/moisture mapping, industrial thermal imaging, & astronomy and scientific applications.

Product Specifications

Product Details

  • Part Number
    FPA0640P15F-17-T1X
  • Manufacturer
    Chunghwa Leading Photonics Tech (CLPT)
  • Description
    0.9 µm to 1.7 µm, Near-Infared InGaAs Image Sensor

General Parameters

  • SWIR Type
    InGaAs SWIR Sensor
  • Sensor Technology
    Planar lnGaAs PIN
  • Total Number of Pixels
    640 x 512 pixels
  • Sensor Type
    Area Scan Sensor
  • Number of Effective Pixels
    636 x 508 pixels
  • Dark Current
    <20 fA
  • Pixel Size(H x V)
    15 x 15 µm
  • Pixel Pitch
    15 µm
  • Cooling
    Single Stage High Current TE Cooled
  • Image Size
    9.6 x 7.68 mm
  • Package Type
    DIP
  • Package
    28-Pin Metal SDIP
  • Array Operability
    >99.9% (Pixel)
  • Detectivity
    >3.5 x 1012 cm-vHz/W (Mean Detectivity)
  • Maximum Pixel Rate
    18 MHz
  • Mega Pixel
    0.32 MP
  • Non Uniformity Without Corrections
    <5%
  • Output Signal Swing
    2.25 V
  • Power Consumption
    200 mW
  • Quantum Efficiency
    >70%
  • Readout Modes
    ITR/IWR, IMRO
  • Readout Noise
    <35 e- (Floor)
  • Resolution
    640 (H) x 512 (V)
  • Saturation Charge
    0.041 to 1.380 Me- (Charge Capacity)
  • Spectral Response Range
    0.9 to 1.7 µm
  • Note
    Noise Equivalent Irradiance: <1.8 x 1010 ph#/cm2-s, Minimum Integration Period: <1 µs

Applications

  • Application
    Near-Infared Imaging, Convert Surveillance, Semiconductor/Solar Panel Inspection, Medical Science and Biology, Fiberoptic Telecommunication, See through Fog/Smoke, Ice/Slush/Moisture Mapping, Industrial Thermal Imaging, Astronomy and Scientific

Physical Properties

  • Dimensions
    36.1 x 25.4 x 7.3 mm (L x W x T)
  • Weight
    19.5 g (±0.5)

Environmental Conditions

  • Operating Temperature
    -40 to 71 Degree C
  • Storage Temperature
    -40 to 80 Degree C

Technical Documents

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