G12230-512WB

SWIR Sensor by Hamamatsu Photonics

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The G12230-512WB from Hamamatsu Photonics is an InGaAs Linear SWIR Sensor that has a spectral response of 0.95 µm - 2.15 µm. It has an effective pixel resolution of 512 pixels and a peak sensitivity wavelength of 1.55 µm & 1.95 µm. This NIR image sensor has a pixel size of 25 µm x 250 µm, pixel pitch of 25 µm, and an image size of 12.8 mm x 0.25 mm. It has a readout noise of 220 & 300 µV rms (at 0.1 ms) and dynamic range of 12200. This image sensor has a photosensitivity of 0.82 A/W & 1 A/W and photoresponse non-uniformity of ± 5 % at an integration time of 10 ms.

The G12230-512WB includes charge amplifiers, a shift register, and timing generator. It consists of a series arrangement of two InGaAs chips with different cutoff wavelengths. This image sensor has a saturation output voltage of 2.7 V, conversion efficiency of 16 nV/e- & 160 nV/e-, and full well capacity of 168.7 Me- & 16.8 Me-. It has a dark output of ± 0.2 V/s & 5 V/s and dark current of ± 0.2 pA & 5 pA. This image sensor has an operation frequency of 1 MHz and video data rate of 0.1 MHz - 5 MHz.

The G12230-512WB has a two-stage thermoelectric cooler that requires an allowable current of 2.8 A and a voltage of 4 V. This image sensor has a sapphire window with an anti-reflective coating. It requires a DC supply voltage of 5 V and consumes 80 mA of current. This image sensor is available in a 28-pin metal package that measures 63.5 ± 0.15 (L) mm x 25.4 ± 0.15 (W) mm x 13.65 ± 1.2 (H) mm and is ideal for near-infrared multichannel spectrophotometry and non-destructive inspection equipment applications.

Product Specifications

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Product Details

  • Part Number
    G12230-512WB
  • Manufacturer
    Hamamatsu Photonics
  • Description
    0.95 µm - 2.15 µm, NIR Image Sensor for Multichannel Spectrophotometry Applications

General Parameters

  • SWIR Type
    InGaAs SWIR Sensor
  • Sensor Technology
    Indium Gallium Arsenide (InGaAs)
  • Total Number of Pixels
    512 pixels
  • Sensor Type
    Line Scan Sensor
  • Number of Effective Pixels
    254 + 254 pixels
  • Dark Current
    -2 to 50 pA
  • Pixel Size(H x V)
    25 x 250 µm
  • Pixel Pitch
    25 µm
  • Cooling
    Two-stage TE-Cooled
  • Image Size
    12.8 x 0.25 mm
  • Line Rate
    9150 lines/s
  • Package Type
    Hermatically Sealed, Chip
  • Package
    28-pin metal
  • Clock Pulse rise/fall times
    20 to 30 ns
  • Clock Pulse Voltage
    0. to 5.3 V
  • Conversion Efficiency
    16 to 160 nV/e
  • Current Consumption
    80 to 100 mA
  • Dark Output (nonuniformity)
    0.2 to 5 V/s (nonuniformity)
  • Defective Pixels
    0.02
  • Operating Frequency
    0.1 to 5 MHz
  • Output Impedance
    5 kOhms
  • Peak Sensitivity Wavelength
    1.8 to 2.05 µm
  • Photoresponse Nonuniformity
    ±5 to ±10%
  • Readout Noise
    220 to 500 µV rms
  • Reset pulse rise/fall times
    20 to 30 ns
  • Reset Pulse Width
    6 to 28 clocks
  • Saturation Output Voltage
    2.6 to 2.7 V
  • Thermistor B Constant
    3660 K
  • Thermistor Power Dissipation
    400 mW
  • Thermistor Resistance
    9 to 11 kOhms
  • Window Material
    Sapphire (with anti-refl ective coating)
  • Clock Frequency
    0.1 to 5 MHz
  • Clock Pulse Width
    60 to 5000 ns
  • Data Rate
    0.1 to 5 MHz(Video)
  • Responsivity/Photosensitivity
    0.7 to 1.0 A/W
  • Spectral Response Range
    0.95 to 2.15 µm
  • Supply Voltage
    4.7 to 5.3 V
  • Supply Current
    80 to 100 mA

Applications

  • Application
    Near infrared multichannel spectrophotometry, Non-destructive inspection equipment

Environmental Conditions

  • Operating Temperature
    -20 to 70 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents

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