G13393-0909W

SWIR Sensor by Hamamatsu Photonics

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The G13393-0909W from Hamamatsu Photonics is an InGaAs Area Image Sensor that has a spectral range of 0.95 µm - 1.7 µm. It has a global shutter that delivers a maximum frame rate of 62 fps and an effective pixel array of 640 x 512 pixels. This near-IR sensor has a pixel size of 20 µm x 20 µm, pixel pitch of 20 µm, and an image size of 12.8 mm x 10.24 mm. It has a fill factor of 100% with a peak sensitivity wavelength of 1.55 µm and photosensitivity of 0.8 A/W. This SWIR sensor has a conversion efficiency of 1 µV/e- and saturation charge of 1100 ke-. It has a readout noise of 500 µV rms (at 10 ms) and dynamic range of 2200. This SWIR sensor has a photoresponse non-uniformity of ±10 % at an integration time of 5 ms (after subtracting dark output) and video data rate of 4 MHz.

The G13393-0909W has a hybrid structure that consists of a CMOS readout circuit (ROIC: readout integrated circuit) and back-illuminated InGaAs photodiodes. It has a two-stage thermoelectric cooler with an internal resistance of 0.9 Ohms and an anti-reflective coated sapphire glass window. This SWIR sensor requires a DC supply voltage of 5 V and consumes 70 mA of current. It is available in a hermetically sealed 28-pin metal package that measures 46 (L) mm x 25.4 (W) mm x 17.6 (H) mm and is ideal for thermal image monitors, hyperspectral imaging, near-infrared image detection, foreign object detection, semiconductor testing, and traffic monitoring applications.

Product Specifications

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Product Details

  • Part Number
    G13393-0909W
  • Manufacturer
    Hamamatsu Photonics
  • Description
    0.95 µm - 1.7 µm, InGaAs SWIR Sensor for Semiconductor Testing Applications

General Parameters

  • SWIR Type
    InGaAs SWIR Sensor
  • Sensor Technology
    Indium Gallium Arsenide (InGaAs)
  • Total Number of Pixels
    640 x 512 (327680) pixels
  • Sensor Type
    Area Scan Sensor
  • Number of Effective Pixels
    640 x 512 (327680) pixels
  • Dark Current
    0.5 to 2.5 pA
  • Pixel Size(H x V)
    20 x 20 µm
  • Pixel Pitch
    20 µm
  • Cooling
    Two-stage TE-Cooled
  • Image Size
    12.8 x 10.24 mm
  • Frame Rate
    62 fps
  • Package Type
    Hermatically Sealed, Chip
  • Package
    28-pin metal
  • Clock Pulse rise/fall times
    10 to 12 ns
  • Clock Pulse Voltage
    0.5 V
  • Conversion Efficiency
    1 µV/e
  • Dark Output (nonuniformity)
    ±0.1 to ±0.3 V
  • Defective Pixels
    0.01
  • Dynamic Range
    2200
  • Element bias Current
    1 mA
  • Element bias Voltage
    2.9 to 3.1 V
  • Mega Pixel
    0.32 MP
  • Output settling time
    50 ns
  • Peak Sensitivity Wavelength
    1.55 µm
  • Photoresponse Nonuniformity
    ±10 to ±20%
  • Readout Noise
    500 to 1000 µV rms
  • Reset (fall) timing
    10 ns
  • Reset (rise) timing
    10 ns
  • Resolution
    640 (H) x 512 (V)
  • Saturation Charge
    1100 ke-
  • Saturation Output Voltage
    0.6 to 1.1 V
  • Shutter Type
    Global Shutter
  • Start pulse rise/fall times
    10 to 12 ns
  • Thermistor Power Dissipation
    0.2 mW
  • Thermistor Resistance
    8.2 to 9.8 kOhms
  • Video line reset voltage
    2.9 to 3.1 V
  • Video Output Voltage
    2.8 to 4.1 V
  • Window Material
    Sapphire glass with anti-refl ective coating
  • Clock Frequency
    25 MHz
  • Clock Pulse Width
    10 ns
  • Data Rate
    6.25 MHz(Video)
  • Responsivity/Photosensitivity
    0.7 to 0.8 A/W
  • Spectral Response Range
    0.95 to 1.7 µm
  • Supply Voltage
    4.9 to 5.1 V

Applications

  • Application
    Thermal image monitors, Hyperspectral imaging, Near infrared image detection, Semiconductor testing, Foreign object detection, Traffic monitoring

Environmental Conditions

  • Operating Temperature
    0 to 60 Degree C
  • Storage Temperature
    -20 to 70 Degree C

Technical Documents

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