Laser Diodes - LECC Technology

32 Laser Diodes from LECC Technology meet your specification.
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  • Manufacturer : LECC Technology
Description: MOCVD grown 670 nm band Index-Guided type InGaAlP laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
660 to 680 nm
Output Power:
10 mW
Operating Current:
40 to 80 mA
Operating Voltage:
2.3 to 2.6 V
Threshold Current:
20 to 40 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 780 nm band AIGaAs laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
775 to 800 nm
Output Power:
6 mW
Operating Current:
27 to 38 mA
Operating Voltage:
1.5 to 2.5 V
Threshold Current:
8 to 24 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 780 nm band AIGaAs laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
775 to 800 nm
Output Power:
10 mW
Operating Current:
25 to 40 mA
Operating Voltage:
1.5 to 2.4 V
Threshold Current:
8 to 20 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 850 nm band AlGaAs laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
845 to 865 nm
Output Power:
20 mW
Operating Current:
15 to 70 mA
Operating Voltage:
2 to 2.5 V
Threshold Current:
5 to 30 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
650 to 660 nm
Output Power:
5 mW
Operating Current:
40 to 55 mA
Operating Voltage:
2.2 to 2.6 V
Threshold Current:
30 to 45 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 780 nm band AIGaAs laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
770 to 800 nm
Output Power:
5 mW
Operating Current:
30 to 40 mA
Operating Voltage:
1.9 to 2.3 V
Threshold Current:
20 to 30 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 780 nm band AIGaAs laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
775 to 800 nm
Output Power:
10 mW
Operating Current:
30 to 45 mA
Operating Voltage:
1.5 to 2.4 V
Threshold Current:
8 to 20 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 808 nm band laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
803 to 813 nm
Output Power:
200 mW
Operating Current:
250 to 280 mA
Operating Voltage:
1.9 to 2.5 V
Threshold Current:
60 to 80 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
648 to 660 nm
Output Power:
5 mW
Operating Current:
23 to 26 mA
Operating Voltage:
2.2 to 2.6 V
Threshold Current:
16 to 20 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 670 nm band Index-Guided type InGaAlP laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
660 to 680 nm
Output Power:
5 mW
Operating Current:
30 to 45 mA
Operating Voltage:
2.3 to 2.6 V
Threshold Current:
20 to 40 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 635 nm band InGaAlP laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
633 to 645 nm
Output Power:
40 mW
Operating Current:
90 to 120 mA
Operating Voltage:
2.4 to 2.7 V
Threshold Current:
50 to 80 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 850 nm band AlGaAs laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
845 to 865 nm
Output Power:
40 mW
Operating Current:
70 to 110 mA
Operating Voltage:
2 to 2.5 V
Threshold Current:
30 to 45 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 635 nm band InGaAlP laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
630 to 645 nm
Output Power:
20 mW
Operating Current:
60 to 80 mA
Operating Voltage:
2.3 to 2.6 V
Threshold Current:
30 to 50 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
650 to 660 nm
Output Power:
5 mW
Operating Current:
27 to 35 mA
Operating Voltage:
2.15 to 2.6 V
Threshold Current:
20 to 30 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 685 nm band InGaAlP laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
670 to 700 nm
Output Power:
30 mW
Operating Current:
80 to 140 mA
Operating Voltage:
2 to 3 V
Threshold Current:
35 to 60 mA
Reverse Voltage:
2 V
more info
1 - 15 of 32 Laser Diodes
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