Laser Diodes - LECC Technology

32 Laser Diodes from LECC Technology meet your specification.
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  • Manufacturer : LECC Technology
Description: MOCVD grown 635 nm band InGaAlP laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
630 to 640 nm
Output Power:
5 mW
Operating Current:
45 to 60 mA
Operating Voltage:
2.2 to 2.7 V
Threshold Current:
40 to 45 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 780 nm band AIGaAs laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
775 to 800 nm
Output Power:
10 mW
Operating Current:
25 to 40 mA
Operating Voltage:
1.5 to 2.4 V
Threshold Current:
8 to 20 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 780 nm band AIGaAs laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
770 to 800 nm
Output Power:
5 mW
Operating Current:
30 to 40 mA
Operating Voltage:
1.9 to 2.3 V
Threshold Current:
20 to 30 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 830 nm band GaAs laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
820 to 840 nm
Output Power:
20 mW
Operating Current:
45 to 70 mA
Operating Voltage:
1.9 to 2.5 V
Threshold Current:
15 to 30 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 808 nm band laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
803 to 813 nm
Output Power:
200 mW
Operating Current:
260 to 280 mA
Operating Voltage:
1.9 to 3 V
Threshold Current:
75 to 95 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
650 to 660 nm
Output Power:
5 mW
Operating Current:
27 to 35 mA
Operating Voltage:
2.15 to 2.6 V
Threshold Current:
20 to 30 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 780 nm band AIGaAs laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
775 to 800 nm
Output Power:
10 mW
Operating Current:
22 to 40 mA
Operating Voltage:
1.5 to 2.4 V
Threshold Current:
8 to 18 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 635 nm band InGaAlP laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
630 to 640 nm
Output Power:
7 mW
Operating Current:
43 to 55 mA
Operating Voltage:
2.2 to 2.5 V
Threshold Current:
30 to 40 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 635 nm band InGaAlP laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
637 to 645 nm
Output Power:
10 mW
Operating Current:
55 to 75 mA
Operating Voltage:
2.2 to 2.5 V
Threshold Current:
35 to 50 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 850 nm band AlGaAs laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
845 to 865 nm
Output Power:
20 mW
Operating Current:
15 to 70 mA
Operating Voltage:
2 to 2.5 V
Threshold Current:
5 to 30 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 780 nm band AIGaAs laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
770 to 795 nm
Output Power:
3 mW
Operating Current:
45 to 65 mA
Operating Voltage:
1.9 to 2.3 V
Threshold Current:
25 to 45 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 808 nm band laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
803 to 813 nm
Output Power:
500 mW
Operating Current:
550 to 700 mA
Operating Voltage:
2.2 to 2.3 V
Threshold Current:
100 to 200 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
648 to 660 nm
Output Power:
5 mW
Operating Current:
23 to 26 mA
Operating Voltage:
2.2 to 2.6 V
Threshold Current:
16 to 20 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 670 nm band Gain-Guided type InGaAlP laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
660 to 680 nm
Output Power:
5 mW
Operating Current:
50 to 70 mA
Operating Voltage:
2.3 to 2.6 V
Threshold Current:
40 to 60 mA
Reverse Voltage:
2 V
more info
Description: MOCVD grown 635 nm band InGaAlP laser diode with quantum well structure
Type:
Free Space Laser Diode
Technology:
Quantum Well
Package Type:
TO-Can
Wavelength:
630 to 640 nm
Output Power:
5 mW
Operating Current:
32 to 45 mA
Operating Voltage:
2.2 to 2.7 V
Threshold Current:
23 to 35 mA
Reverse Voltage:
2 V
more info
1 - 15 of 32 Laser Diodes
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