Optical Detectors

685 Optical Detectors from 18 manufacturers listed on GoPhotonics
Description:Single Mode Ultrafast Detector with Current Monitor, 700 - 870 nm, DC - 25 GHz, FC/PC
Package Type:
Module with Connector
Photodiode Material:
GaAs
Spectral Band:
Red
Wavelength Range:
700 to 870 nm
Dark Current:
50 nA
Responsivity/Photosensitivity:
0.5 A/W
Rise Time:
19 ps
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Description:300µm NIR (800-1500nm), Ge APD
Package Type:
Through-Hole
Photodetector Type:
Avalanche
Photodiode Material:
Germanium
Spectral Band:
Near-IR
Wavelength Range:
800 to 1500 nm
Active Area Diameter:
0.3 mm
Capacitance:
8 pF
Dark Current:
300.00 to 400.00 nA
Responsivity/Photosensitivity:
Photosensitivity: 0.73 A/W
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Description:Differential Photodiode in DIL Plastic Package
Package Type:
Through-Hole
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1150 nm
Capacitance:
25 pF
Dark Current:
10 to 100 nA
Responsivity/Photosensitivity:
Spectral sensitivity: 0.55 A / W
Rise Time:
0.5 µs
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Description:ET-3600 - 22GHz InGaAs Photodetector
Package Type:
Module with Connector
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1300 nm
Active Area Diameter:
0.02 mm
Dark Current:
1 nA
Responsivity/Photosensitivity:
0.70 A/W
Rise Time:
0.016 ns
Bandwidth:
22 GHz
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Description:Si PIN and APD Modules - InGaAs APD Modules
Active Area:
0.8 mm2
Package Type:
DIP, Through-Hole
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs, Silicon
Spectral Band:
Ultraviolet, Near-IR
Wavelength Range:
900 to 1060 nm
Responsivity/Photosensitivity:
200 to 370 kV/W
Bandwidth:
200 MHz
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Description:Multi-channel PbSe uncooled detector with filters
Active Area:
1 mm2
Package Type:
Through-Hole
Photodiode Material:
Pbse
Wavelength Range:
3.6 to 3.8 µm
Responsivity/Photosensitivity:
1.5x10 10 V/W
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Description:Analog Receiver, Pigtailed, PIN ROSA
Package Type:
Connectorized
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1600 nm
Responsivity/Photosensitivity:
0.75 to 0.85 mA/mW
Bandwidth:
6 to 7 GHz
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Description:InGaAs PIN Photodiode Modules for Telecom Applications
Package Type:
Through-Hole
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Active Area Diameter:
75 µm
Capacitance:
0.5 to 0.75 pF
Dark Current:
0.05 to 0.5 nA
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Bandwidth:
2.5 GHz
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Description:Multimode Ultrafast Detector with Current Monitor, 700 - 870 nm, DC - 25 GHz, FC/PC
Package Type:
Module with Connector
Photodiode Material:
GaAs
Spectral Band:
Red
Wavelength Range:
700 to 870 nm
Dark Current:
50 nA
Responsivity/Photosensitivity:
0.45 A/W
Rise Time:
19 ps
more info
Description:High Speed Response, 1.0mm2, Silicon Detector
Active Area:
1 mm2
Package Type:
Through-Hole, Leaded
Photodiode Material:
Silicon
more info