Optical Detectors

567 Optical Detectors from 17 manufacturers listed on GoPhotonics
Description: Single Mode Ultrafast Detector with Current Monitor, 700 - 870 nm, DC - 25 GHz, FC/PC
Package Type:
Module with Connector
Photodiode Material:
GaAs
Spectral Band:
Red
Wavelength Range:
700 to 870 nm
Dark Current:
50 nA
Responsivity/Photosensitivity:
0.5 A/W
Rise Time:
19 ps
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Description: 5.0mm NIR (400-1000nm), Si APD
Package Type:
Through-Hole
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Spectral Band:
Near-IR
Wavelength Range:
400 to 1000 nm
Active Area Diameter:
5 mm
Capacitance:
95 pF
Dark Current:
3.00 to 30.00 nA
Responsivity/Photosensitivity:
Photosensitivity: 0.5 A/W
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Description: PIN Photodiode in 5 mm (T1 ¾) Plastic Package, Radiant Sensitive Area 1 x 1 mm², Half Angle ±20 °
Package Type:
Through-Hole
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
750 to 1100 nm
Capacitance:
11 pF
Dark Current:
1 to 5 nA
Responsivity/Photosensitivity:
Spectral sensitivity: 0.62 A / W
Rise Time:
0.005 µs
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Description: InGaAs Avalanche Photodiode (APD) 2.5 Gbps with TIA
Package Type:
Through-Hole
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
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Description: InGaAs APD Module
Package Type:
Through-Hole
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1650 nm
Active Area Diameter:
50 µm
Capacitance:
1 pF
Dark Current:
2 nA
Responsivity/Photosensitivity:
7 to 9 A/W
Bandwidth:
2.5 GHz
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Active Area:
1 mm x 1 mm
Package Type:
Through-Hole
Photodetector Type:
PIN
Photodiode Material:
Pbse
Spectral Band:
Infrared
Wavelength Range:
4.1 to 4.3 nm
Responsivity/Photosensitivity:
1.2 x 10^5 V/W
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Description: InGaAs IR PIN Photodiodes
Package Type:
Ceramic, Leaded
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Spectral Band:
Near-IR
Wavelength Range:
800 to 1700 nm
Capacitance:
70 to 150 pF
Dark Current:
0.2 to 10 nA
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Rise Time:
2 ns
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Description: Single-Channel Voltage-Mode Pyroelectric Photodetectors for FTIR, Spectroscopy & THz Detection
Package Type:
TO-Can
Photodiode Material:
Pyroelectric, LiTaO3
Spectral Band:
Ultraviolet, Near-IR, Infrared
Active Area Diameter:
5.3 mm
Responsivity/Photosensitivity:
35 to 275 V/W
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Description: High Sensitivity Fast PIN Photodetector
Package Type:
Module with Connector
Photodetector Type:
PIN
Photodiode Material:
Silicon, InGaAs
Spectral Band:
UV-IR
Wavelength Range:
400 to 1650 nm
Active Area Diameter:
0.25 mm
Rise Time:
2 ns
Bandwidth:
Modulation Bandwidth: DC to 200 MHz
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Package Type:
Module with Connector
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Spectral Band:
Infrared
Wavelength Range:
800 to 1700 nm
Dark Current:
0.3 nA
Rise Time:
35 ps
Bandwidth:
10 GHz
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Description: Fast Photodiode Detectors (FPD) from 193 to 1100 nm
Active Area:
5.11 x 5.11 mm
Package Type:
Benchtop
Photodetector Type:
PIN
Photodiode Material:
Silicon
Spectral Band:
Ultraviolet
Wavelength Range:
193 to 1100 nm
Active Area Diameter:
2.55 mm
Dark Current:
10 nA
Responsivity/Photosensitivity:
0.58 A/W
Rise Time:
3 nS
Bandwidth:
118 MHz
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Description: Pyroelectric Optical Detector for Laser Energy Measurement of up to 3 J
Wavelength Range:
0.193 to 22 um
Active Area Diameter:
22 mm
Responsivity/Photosensitivity:
20 A/W
Rise Time:
20 us
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Description: Analogue Pyroelectric Detectors for Gas Analysis and Flame Detection
Package Type:
Through-Hole
Photodiode Material:
Pyroelectric, LiTaO3
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Description: Spectrolab’s 200 micron diameter Avalanche Photodetector Die is built on using low-noise InAlAs/InGaAs device design. These are front illuminated mesa design and offer low dark current and low-noise h...
Package Type:
TO-Can, Die
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs, InAlAs
Spectral Band:
Infrared
Wavelength Range:
1500 nm
Active Area Diameter:
200 µm
Capacitance:
4.0 pF
Dark Current:
25 to 200 nA
Responsivity/Photosensitivity:
7 to 9 A/W
Bandwidth:
200 MHz
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Description: Si CMOS Avalanche Photodiodes
Package Type:
Die
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Spectral Band:
Infrared
Wavelength Range:
850 nm
Active Area Diameter:
20 µm
Dark Current:
50 pA
Responsivity/Photosensitivity:
0.3 to 0.25 A/W
Bandwidth:
2 to 3 GHz
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1 - 15 of 567 Optical Detectors
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