Optical Detectors

633 Optical Detectors from 13 manufacturers listed on GoPhotonics
Description:PbSe Photoconductor, 2 mm x 2 mm Active Area, 10 µs Rise Time, 1.5 - 4.8 µm
Active Area:
4 m2
Package Type:
Through-Hole
Photodiode Material:
PbS
Wavelength Range:
1.5 to 4.8 µm
Rise Time:
10 µs
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Description:1.0mm NIR (400-1000nm), Si APD
Package Type:
Through-Hole
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Spectral Band:
Near-IR
Wavelength Range:
400 to 1000 nm
Active Area Diameter:
1 mm
Capacitance:
6 pF
Dark Current:
0.20 to 2.00 nA
Responsivity/Photosensitivity:
Photosensitivity: 0.5 A/W
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Description:SMT PIN Photodiode in SMR Package, Radiant Sensitive Area 1 x 1 mm²
Package Type:
Surface Mount
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
750 to 1100 nm
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Description:ET-3600F - 22GHz InGaAs Photodetector with fiber
Package Type:
Module with Connector
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1300 nm
Active Area Diameter:
0.02 mm
Dark Current:
1 nA
Responsivity/Photosensitivity:
0.70 A/W
Rise Time:
0.016 ns
Bandwidth:
22 GHz
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Description:Quadrant PIN
Active Area:
100 mm2
Package Type:
Through-Hole
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
900 to 1060 nm
Active Area Diameter:
11.3 mm
Capacitance:
9 pF
Dark Current:
75 nA
Responsivity/Photosensitivity:
0.5 to 0.6 A/W
Rise Time:
8 ns
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Description:AT2 Series - Two Stage Cooled PbS Packaged IR Detectors
Active Area:
36 mm2
Package Type:
Through-Hole
Photodiode Material:
Pbse
Spectral Band:
Infrared
Wavelength Range:
4.3 to 4.5 µm
Responsivity/Photosensitivity:
2.5x10 4 V/W
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Description:4.25Gbps 850nm PIN + Preamp, LC ROSA
Package Type:
Through-Hole
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
770 to 870 nm
Bandwidth:
2 to 4 GHz
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Description:InGaAs PIN Photodiode Modules for Telecom Applications
Package Type:
Through-Hole
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Active Area Diameter:
75 µm
Capacitance:
0.5 to 0.75 pF
Dark Current:
0.05 to 0.5 nA
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Bandwidth:
2.5 GHz
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Description:InGaAs Avalanche Photodetector, Temperature Compensated, 900 - 1700 nm, 8-32 Taps
Active Area:
0.2 m2
Package Type:
Module with Connector
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Responsivity/Photosensitivity:
9 A/W
Bandwidth:
DC to 50 MHz
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Description:0.5mm UV-VIS (200-1000nm), Si APD
Package Type:
Through-Hole
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Spectral Band:
Ultraviolet, Visible
Wavelength Range:
200 to 1000 nm
Active Area Diameter:
0.5 mm
Capacitance:
7 pF
Dark Current:
0.20 to 5.00 nA
Responsivity/Photosensitivity:
Photosensitivity: 0.42 A/W
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