Optical Detectors - Thorlabs Inc

59 Optical Detectors from Thorlabs Inc meet your specification.
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Description:Si Avalanche Photodetector, UV Enhanced, 200 - 1000 nm, M4 Taps
Active Area:
1 m2
Package Type:
Module with Connector
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Spectral Band:
Ultraviolet
Wavelength Range:
200 to 1000 nm
Responsivity/Photosensitivity:
25 A/W
Bandwidth:
DC to 50 MHz
more info
Description:Si Photodiode, 1 ns Rise Time, 200 - 1100 nm, Ø1 mm Active Area
Active Area:
0.82 m2
Package Type:
Through-Hole
Photodetector Type:
PIN
Photodiode Material:
Silicon
Spectral Band:
Visible
Wavelength Range:
200 to 1100 nm
Capacitance:
6 pF
Dark Current:
0.3 nA
Rise Time:
1 ns
more info
Description:PbSe Photoconductor, 2 mm x 2 mm Active Area, 10 µs Rise Time, 1.5 - 4.8 µm
Active Area:
4 m2
Package Type:
Through-Hole
Photodiode Material:
PbS
Wavelength Range:
1.5 to 4.8 µm
Rise Time:
10 µs
more info
Description:Large Area Mounted Germaniµm Photodiode, 800-1800 nm, Cathode Grounded
Active Area:
7.1 m2
Package Type:
Connectorized, External Thread
Photodiode Material:
Germanium
Wavelength Range:
800 to1800 nm
Capacitance:
3.25 nF
Dark Current:
4.0 µA
Responsivity/Photosensitivity:
0.88 A/W
Rise Time:
500 ns
more info
Description:InGaAs Avalanche Photodetector, Temperature Compensated, 900 - 1700 nm, 8-32 Taps
Active Area:
0.2 m2
Package Type:
Module with Connector
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Responsivity/Photosensitivity:
9 A/W
Bandwidth:
DC to 50 MHz
more info
Description:Calibrated Si Photodiode, 350 - 1100 nm, 10 x 10 mm Active Area
Active Area:
100 m2
Package Type:
Ceramic, Surface Mount
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Capacitance:
375 pF
Dark Current:
600 nA
Rise Time:
65 ns
more info
Description:Calibrated Ge Photodiode, 800 - 1800 nm, Ø5.0 mm Active Area
Active Area:
19.6 m2
Package Type:
Ceramic, Surface Mount
Photodiode Material:
Germanium
Wavelength Range:
800 to 1800 nm
Rise Time:
220 ns
more info
Description:Si Photodiode, 10 ns Rise Time, 350 - 1100 nm, 3.6 mm x 3.6 mm Active Area
Active Area:
13 m2
Package Type:
Through-Hole
Photodetector Type:
PIN
Photodiode Material:
Silicon
Spectral Band:
Visible
Wavelength Range:
350 to 1100 nm
Capacitance:
24 pF
Dark Current:
1.0 nA
Rise Time:
10 ns
more info
Description:Mounted UV Enhanced Silicon Photodiode, 200-1100 nm, Cathode Grounded
Active Area:
10 m2
Package Type:
Connectorized, External Thread
Photodiode Material:
Silicon
Spectral Band:
Ultraviolet
Wavelength Range:
200 to 1100 nm
Capacitance:
1.75 nF
Dark Current:
1.0 µA
Responsivity/Photosensitivity:
0.50 A/W
Rise Time:
45 ns
more info
Description:InGaAs Variable-Gain Avalanche Photodetector, Temperature Compensated, 900 - 1700 nm, DC - 400 MHz, 8-32 Taps
Active Area:
0.2 m2
Package Type:
Module with Connector
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Responsivity/Photosensitivity:
18 A/W
Bandwidth:
DC to 400 MHz
more info