Photodetectors - Excelitas Technologies

20 Photodetectors from Excelitas Technologies meet your specification.

Photodetectors from Excelitas Technologies are listed on GoPhotonics. We have compiled a list of Photodetectors from the Excelitas Technologies website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Excelitas Technologies and their distributors in your region.

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  • Manufacturer : Excelitas Technologies
Description: 1100 to 1700 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Infrared
Photodetector Type:
Avalanche, PIN
Photodetector Material:
InGaAs
Package Type:
TO-Can
Wavelength Range:
1100 to 1700 nm
Active Area Diameter:
0.2 mm
Supply Voltage:
40 to 70 V
Bandwidth:
40 to 50 MHz
Rise Time:
7 ns
more info
Description: 1100 to 1700 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Infrared
Photodetector Type:
Avalanche, PIN
Photodetector Material:
InGaAs
Package Type:
TO-Can
Wavelength Range:
1100 to 1700 nm
Active Area Diameter:
0.2 mm
Supply Voltage:
40 to 70 V
Bandwidth:
40 to 50 MHz
Rise Time:
7 ns
more info
Description: 1100 to 1700 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Infrared
Photodetector Type:
Avalanche, PIN
Photodetector Material:
InGaAs
Package Type:
TO-Can
Wavelength Range:
1100 to 1700 nm
Active Area Diameter:
0.08 mm
Supply Voltage:
40 to 70 V
Bandwidth:
175 to 200 MHz
Rise Time:
2 ns
more info
Description: 1100 to 1700 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Infrared
Photodetector Type:
Avalanche, PIN
Photodetector Material:
InGaAs
Package Type:
TO-Can
Wavelength Range:
1100 to 1700 nm
Active Area Diameter:
0.08 mm
Supply Voltage:
40 to 70 V
Bandwidth:
175 to 200 MHz
Rise Time:
2 ns
more info
Description: 400 to 950 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Visible, Near-IR
Photodetector Type:
Avalanche, PIN
Photodetector Material:
Silicon
Package Type:
TO-Can
Wavelength Range:
400 to 950 nm
Supply Voltage:
350 to 430 V
Bandwidth:
40 to 50 MHz
Rise Time:
7 ns
more info
Description: 500 to 1650 nm Module Photoconductive Photodetector
Spectral Band:
Visible, Near-IR
Photodetector Type:
Avalanche
Photodetector Material:
Indium Gallium Arsenide (InGaAs), Silicon (Si)
Package Type:
Module
Wavelength Range:
500 to 1650 nm
Supply Voltage:
12 V
Dark Current:
20 to 200 nA
Responsivity/Photosensitivity:
0.2 to 0.7 A/W
Rise Time:
5 ns
more info
Description: 400 to 1150 nm Module Photovoltaic Photodetector
Spectral Band:
Visible, Near-IR
Photodetector Type:
PIN
Photodetector Material:
Silicon
Package Type:
Module
Wavelength Range:
400 to 1150 nm
Active Area Diameter:
80.6 mm
Supply Voltage:
±5 to 18 V
Responsivity/Photosensitivity:
0.6 A/W
Bandwidth:
1100 Hz
Rise Time:
32 µs
more info
Description: 400 to 1100 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Visible, Near-IR
Photodetector Type:
Avalanche
Photodetector Material:
Silicon
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Active Area Diameter:
0.8 mm
Supply Voltage:
275 to 425 V
Bandwidth:
DC to 200 MHz
Rise Time:
7 to 10 ns
more info
Description: 400 to 1100 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Visible, Near-IR
Photodetector Type:
Avalanche
Photodetector Material:
Silicon
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Active Area Diameter:
0.5 mm
Supply Voltage:
180 to 260 V
Bandwidth:
175 to 200 MHz
Rise Time:
2 ns
more info
Description: 1100 to 1700 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Infrared
Photodetector Type:
Avalanche
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
Package Type:
TO-Can
Wavelength Range:
1100 to 1700 nm
Active Area Diameter:
0.08 mm
Supply Voltage:
40 to 70 V
Bandwidth:
150 to 175 MHz
Rise Time:
2 ns
more info
1 - 10 of 20 Photodetectors

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