Photodetectors - MKS | Ophir

5 Photodetectors from MKS | Ophir meet your specification.

Photodetectors from MKS | Ophir are listed on GoPhotonics. We have compiled a list of Photodetectors from the MKS | Ophir website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to MKS | Ophir and their distributors in your region.

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  • Manufacturer : MKS | Ophir
Description: 900 to 1700 nm Near-IR, Infrared Benchtop InGaAs Photodetector
Spectral Band:
Near-IR, Infrared
Photodetector Type:
PIN
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
RF Connector:
BNC
Package Type:
Benchtop
Wavelength Range:
900 to 1700 nm
Active Area Diameter:
0.1 mm
Supply Voltage:
6 VDC
Dark Current:
2 nA
Responsivity/Photosensitivity:
1.1 A/W
Bandwidth:
2 GHz
Rise Time:
0.175 ns
more info
Description: 193 to 1100 nm UV-VIS-NIR Benchtop Silicon Photodetector
Spectral Band:
Ultraviolet, Visible, Infrared
Photodetector Type:
PIN
Photodetector Material:
Silicon (Si)
RF Connector:
BNC
Package Type:
Benchtop
Wavelength Range:
193 to 1100 nm
Active Area Diameter:
1.02 mm
Supply Voltage:
12 VDC
Dark Current:
0.3 to 1 nA
Responsivity/Photosensitivity:
0.45 A/W
Bandwidth:
233 MHz
Rise Time:
1.5 ns
more info
Description: 900 to 1700 nm Near-IR, Infrared Benchtop InGaAs Photodetector
Spectral Band:
Near-IR, Infrared
Photodetector Type:
PIN
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
RF Connector:
SMA
Package Type:
Benchtop
Wavelength Range:
900 to 1700 nm
Active Area Diameter:
0.032 mm
Supply Voltage:
6 VDC
Dark Current:
3 nA
Responsivity/Photosensitivity:
0.95 A/W
Bandwidth:
15 GHz
Rise Time:
0.025 ns
more info
Description: 193 to 1100 nm UV-VIS-NIR Benchtop Silicon Photodetector
Spectral Band:
Ultraviolet, Visible, Infrared
Photodetector Type:
PIN
Photodetector Material:
Silicon (Si)
RF Connector:
BNC
Package Type:
Benchtop
Wavelength Range:
193 to 1100 nm
Active Area Diameter:
2.55 mm
Supply Voltage:
24 VDC
Dark Current:
10 nA
Responsivity/Photosensitivity:
0.58 A/W
Bandwidth:
118 MHz
Rise Time:
3 ns
more info
Description: 320 to 1100 nm UV-VIS-NIR Benchtop Silicon Photodetector
Spectral Band:
Ultraviolet, Visible, Infrared
Photodetector Type:
PIN
Photodetector Material:
Silicon (Si)
RF Connector:
BNC
Package Type:
Benchtop
Wavelength Range:
320 to 1100 nm
Active Area Diameter:
0.4 mm
Supply Voltage:
9 VDC
Dark Current:
0.1 nA
Responsivity/Photosensitivity:
0.5 A/W
Bandwidth:
1.2 GHz
Rise Time:
0.3 ns
more info
1 - 5 of 5 Photodetectors

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