Photodetectors

17 Photodetectors from Excelitas Technologies meet your specification.
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  • Package Type : TO-Can
  • Manufacturer : Excelitas Technologies
Description: 1100 to 1700 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Infrared
Photodetector Type:
Avalanche, PIN
Photodetector Material:
InGaAs
Package Type:
TO-Can
Wavelength Range:
1100 to 1700 nm
Active Area Diameter:
0.2 mm
Supply Voltage:
40 to 70 V
Bandwidth:
40 to 50 MHz
Rise Time:
7 ns
more info
Description: 1100 to 1700 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Infrared
Photodetector Type:
Avalanche, PIN
Photodetector Material:
InGaAs
Package Type:
TO-Can
Wavelength Range:
1100 to 1700 nm
Active Area Diameter:
0.2 mm
Supply Voltage:
40 to 70 V
Bandwidth:
40 to 50 MHz
Rise Time:
7 ns
more info
Description: 1100 to 1700 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Infrared
Photodetector Type:
Avalanche, PIN
Photodetector Material:
InGaAs
Package Type:
TO-Can
Wavelength Range:
1100 to 1700 nm
Active Area Diameter:
0.08 mm
Supply Voltage:
40 to 70 V
Bandwidth:
175 to 200 MHz
Rise Time:
2 ns
more info
Description: 1100 to 1700 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Infrared
Photodetector Type:
Avalanche, PIN
Photodetector Material:
InGaAs
Package Type:
TO-Can
Wavelength Range:
1100 to 1700 nm
Active Area Diameter:
0.08 mm
Supply Voltage:
40 to 70 V
Bandwidth:
175 to 200 MHz
Rise Time:
2 ns
more info
Description: 400 to 950 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Visible, Near-IR
Photodetector Type:
Avalanche, PIN
Photodetector Material:
Silicon
Package Type:
TO-Can
Wavelength Range:
400 to 950 nm
Supply Voltage:
350 to 430 V
Bandwidth:
40 to 50 MHz
Rise Time:
7 ns
more info
Description: 400 to 1100 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Visible, Near-IR
Photodetector Type:
Avalanche
Photodetector Material:
Silicon
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Active Area Diameter:
0.8 mm
Supply Voltage:
275 to 425 V
Bandwidth:
DC to 200 MHz
Rise Time:
7 to 10 ns
more info
Description: 400 to 1100 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Visible, Near-IR
Photodetector Type:
Avalanche
Photodetector Material:
Silicon
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Active Area Diameter:
0.5 mm
Supply Voltage:
180 to 260 V
Bandwidth:
175 to 200 MHz
Rise Time:
2 ns
more info
Description: 1100 to 1700 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Infrared
Photodetector Type:
Avalanche
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
Package Type:
TO-Can
Wavelength Range:
1100 to 1700 nm
Active Area Diameter:
0.08 mm
Supply Voltage:
40 to 70 V
Bandwidth:
150 to 175 MHz
Rise Time:
2 ns
more info
Description: 1100 to 1700 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Infrared
Photodetector Type:
Avalanche
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
Package Type:
TO-Can
Wavelength Range:
1100 to 1700 nm
Active Area Diameter:
0.08 mm
Supply Voltage:
40 to 70 V
Bandwidth:
150 to 175 MHz
Rise Time:
2 ns
more info
Description: 400 to 1100 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Visible, Near-IR
Photodetector Type:
Avalanche
Photodetector Material:
Silicon
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Active Area Diameter:
0.8 mm
Supply Voltage:
275 to 435 V
Bandwidth:
200 MHz
Rise Time:
2 ns
more info
1 - 10 of 17 Photodetectors

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