Photodetectors - TO-Can - Page 3

77 Photodetectors from 5 Manufacturers meet your specification.
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  • Package Type : TO-Can
Description: 400 to 1100 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Visible, Near-IR
Photodetector Type:
Avalanche
Photodetector Material:
Silicon
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Active Area Diameter:
0.5 mm
Supply Voltage:
180 to 260 V
Bandwidth:
175 to 200 MHz
Rise Time:
2 ns
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Description: 265 to 322 nm SiC-Photodiode with integrated Filter TO-Can package
Spectral Band:
Ultraviolet
Photodetector Material:
Silicon Carbide (SiC)
Package Type:
TO-Can
Wavelength Range:
265 to 322 nm
Dark Current:
10 fA
Responsivity/Photosensitivity:
0.14 A/W
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Description: 1100 to 1700 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Infrared
Photodetector Type:
Avalanche
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
Package Type:
TO-Can
Wavelength Range:
1100 to 1700 nm
Active Area Diameter:
0.08 mm
Supply Voltage:
40 to 70 V
Bandwidth:
150 to 175 MHz
Rise Time:
2 ns
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Description: 225 to 280 nm SiC-Photodiode with integrated Filter TO-Can package
Spectral Band:
Ultraviolet
Photodetector Material:
Silicon Carbide (SiC)
Package Type:
TO-Can
Wavelength Range:
225 to 280 nm
Dark Current:
10 fA
Responsivity/Photosensitivity:
0.18 A/W
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Description: 1100 to 1700 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Infrared
Photodetector Type:
Avalanche
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
Package Type:
TO-Can
Wavelength Range:
1100 to 1700 nm
Active Area Diameter:
0.08 mm
Supply Voltage:
40 to 70 V
Bandwidth:
150 to 175 MHz
Rise Time:
2 ns
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Description: 390 to 1120 nm Vis/NIR-detecor Silicon-photodiode with integrated 7 mm² active area
Spectral Band:
Visible, Near-IR
Photodetector Type:
PIN
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
390 to 1120 nm
Dark Current:
1 to 10 nA
Responsivity/Photosensitivity:
0.65 A/W
Rise Time:
40 ns
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Description: 400 to 1100 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Visible, Near-IR
Photodetector Type:
Avalanche
Photodetector Material:
Silicon
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Active Area Diameter:
0.8 mm
Supply Voltage:
275 to 435 V
Bandwidth:
200 MHz
Rise Time:
2 ns
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Description: 380 to 720 nm Vis/NIR-detecor Silicon-photodiode with integrated 7 mm² active area
Spectral Band:
Visible, Near-IR
Photodetector Type:
PIN
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
380 to 720 nm
Dark Current:
1 to 10 nA
Responsivity/Photosensitivity:
0.45 A/W
Rise Time:
40 ns
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Description: 400 to 1100 nm TO-Can Photovoltaic Photodetector
Spectral Band:
Visible, Near-IR
Photodetector Type:
Avalanche
Photodetector Material:
Silicon
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Active Area Diameter:
0.8 mm
Supply Voltage:
275 to 435 V
Bandwidth:
200 MHz
Rise Time:
2 ns
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Description: 445 to 640 nm Vis/NIR-detecor Silicon-photodiode with integrated 7 mm² active area
Spectral Band:
Visible, Near-IR
Photodetector Type:
PIN
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
445 to 640 nm
Dark Current:
1 to 10 nA
Responsivity/Photosensitivity:
0.3 A/W
Rise Time:
40 ns
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21 - 30 of 77 Photodetectors

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