Photodetectors - ifw optronics - Page 4

53 Photodetectors from ifw optronics meet your specification.
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  • Manufacturer : ifw optronics
Description: 530 nm Vis/NIR-detecor Silicon-photodiode with integrated Green filer
Spectral Band:
Visible, Near-IR, Green
Photodetector Type:
PIN
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
530 nm
Dark Current:
2 to 20 nA
Responsivity/Photosensitivity:
0.09 A/W
Rise Time:
150 ns
more info
Description: 1 mm² active area Vis/NIR-detecor Silicon-photodiode with transimpedance amplifier
Spectral Band:
Visible, Near-IR
Photodetector Type:
PIN
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
380 to 1100 nm
Bandwidth:
40 kHz
Rise Time:
8 µs
more info
Description: 4.8 mm² active area Vis/NIR-detecor Silicon-photodiode with transimpedance amplifier with 22 to 30 rise time
Spectral Band:
Visible, Near-IR
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Bandwidth:
15 kHz
Rise Time:
22 to 30 µs
more info
Description: 400 to 1100 nm Vis/NIR-detecor Silicon-photodiode with transimpedance amplifier
Spectral Band:
Visible, Near-IR
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Bandwidth:
15 kHz
Rise Time:
22 to 30 µs
more info
Description: Vis/NIR-detector Si - photodiode with integrated amplifier with 20 µs Rise time
Spectral Band:
Visible, Near-IR
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Bandwidth:
15 kHz
Rise Time:
20 µs
more info
Description: 4.8 mm² active area Vis/NIR-detecor Si - photodiode with integrated amplifier
Spectral Band:
Visible, Near-IR
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Bandwidth:
120 kHz
Rise Time:
3 µs
more info
Description: 4.8 mm² active area Vis/NIR-detecor Si - photodiode with integrated amplifier
Spectral Band:
Visible, Near-IR
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Bandwidth:
25 kHz
Rise Time:
15 µs
more info
Description: 4.8 mm² active area Vis/NIR-detecor Si - photodiode with integrated amplifier
Spectral Band:
Visible, Near-IR
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Bandwidth:
10 kHz
Rise Time:
35 µs
more info
Description: 7 mm² active area Vis/NIR-detecor Si - photodiode with integrated amplifier
Spectral Band:
Visible, Near-IR
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Bandwidth:
100 kHz
Rise Time:
3.5 µs
more info
Description: Vis/NIR-detector Si - photodiode with integrated amplifier with 70 µs Rise time
Spectral Band:
Visible, Near-IR
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Bandwidth:
5 kHz
Rise Time:
70 µs
more info
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  • Manufacturer : ifw optronics

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