Photodetectors - TO-Can - Page 6

77 Photodetectors from 5 Manufacturers meet your specification.
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  • Package Type : TO-Can
Description: 228 to 322 nm SiC-Photodiode with integrated filter TO-Can package
Spectral Band:
Ultraviolet
Photodetector Material:
Silicon Carbide (SiC)
Package Type:
TO-Can
Wavelength Range:
228 to 322 nm
Dark Current:
10 fA
Responsivity/Photosensitivity:
0.19 A/W
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Description: 1.5 kHz bandwidth SiC-Photodiode 1.0 mm² with Voltage-Output
Spectral Band:
Ultraviolet
Photodetector Material:
Silicon Carbide (SiC)
Package Type:
TO-Can
Wavelength Range:
215 to 358 nm
Supply Voltage:
2.7 to 5 V
Bandwidth:
1.5 kHz
Rise Time:
200 µs
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Description: 0.3 kHz bandwidth SiC-Photodiode 1.0 mm² with Voltage-Output
Spectral Band:
Ultraviolet
Photodetector Material:
Silicon Carbide (SiC)
Package Type:
TO-Can
Wavelength Range:
215 to 358 nm
Supply Voltage:
2.7 to 5 V
Bandwidth:
0.3 kHz
Rise Time:
1100 µs
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Description: 640 nm Vis/NIR-detecor Silicon-photodiode with integrated red filer
Spectral Band:
Visible, Near-IR, Red
Photodetector Type:
PIN
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
640 nm
Dark Current:
2 to 20 nA
Responsivity/Photosensitivity:
0.33 A/W
Rise Time:
150 ns
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Description: 530 nm Vis/NIR-detecor Silicon-photodiode with integrated Green filer
Spectral Band:
Visible, Near-IR, Green
Photodetector Type:
PIN
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
530 nm
Dark Current:
2 to 20 nA
Responsivity/Photosensitivity:
0.09 A/W
Rise Time:
150 ns
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Description: 1 mm² active area Vis/NIR-detecor Silicon-photodiode with transimpedance amplifier
Spectral Band:
Visible, Near-IR
Photodetector Type:
PIN
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
380 to 1100 nm
Bandwidth:
40 kHz
Rise Time:
8 µs
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Description: 4.8 mm² active area Vis/NIR-detecor Silicon-photodiode with transimpedance amplifier with 22 to 30 rise time
Spectral Band:
Visible, Near-IR
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Bandwidth:
15 kHz
Rise Time:
22 to 30 µs
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Description: 400 to 1100 nm Vis/NIR-detecor Silicon-photodiode with transimpedance amplifier
Spectral Band:
Visible, Near-IR
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Bandwidth:
15 kHz
Rise Time:
22 to 30 µs
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Description: Vis/NIR-detector Si - photodiode with integrated amplifier with 20 µs Rise time
Spectral Band:
Visible, Near-IR
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Bandwidth:
15 kHz
Rise Time:
20 µs
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Description: 4.8 mm² active area Vis/NIR-detecor Si - photodiode with integrated amplifier
Spectral Band:
Visible, Near-IR
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
400 to 1100 nm
Bandwidth:
120 kHz
Rise Time:
3 µs
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51 - 60 of 77 Photodetectors

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