Photodiodes - Hamamatsu Photonics

342 Photodiodes from Hamamatsu Photonics meet your specification.
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  • Manufacturer : Hamamatsu Photonics
Description: Silicon, InGaAs photodiode from 320 to 2600 nm
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
320 to 2600 nm
Operation Mode:
Photovoltaic
Capacitance:
1000 pF
Package Type:
Module
Module:
Yes
more info
Description: InAsSb photodiode from 5.3 µm
Photodiode Material:
InAsSb
Wavelength Range:
5.3 µm
Operation Mode:
Photovoltaic
Capacitance:
1000 pF
Package Type:
Module
Module:
Yes
more info
Description: InGaAs photodiode from 500 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
500 to 1700 nm
Operation Mode:
Photovoltaic
Capacitance:
1000 pF
Package Type:
Module
Module:
Yes
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
100 to 160 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
more info
Description: InGaAs PIN photodiode from 0.9 to 1.65 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.07 to 0.35 nA
Capacitance:
450 to 1500 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
10 to 20 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
DIP
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 0.75 nA
Capacitance:
15 to 20 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
Ceramic, Surface Mount
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
100 to 800 pA
Capacitance:
5 to 8 pF
Responsivity/Photosensitivity:
0.75 to 0.95 A/W
Package Type:
Surface Mount, Chip
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 1.5 nA
Capacitance:
25 to 40 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.8 to 4 nA
Capacitance:
55 to 120 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
more info
Description: Silicon photodiode from 190 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photovoltaic
Capacitance:
1000 pF
Package Type:
Module
Module:
Yes
more info
Description: InGaAs PIN photodiode from 0.9 to 1.67 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.67 µm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 0.5 nA
Capacitance:
250 to 800 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
more info
Description: InGaAs PIN photodiode from 0.9 to 1.67 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.67 µm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 0.8 nA
Capacitance:
450 to 1500 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
more info
Description: InGaAs PIN photodiode from 0.5 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.5 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
15 to 75 nA
Capacitance:
600 to 1200 pF
Responsivity/Photosensitivity:
0.15 to 1 A/W
Package Type:
TO-Can
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 0.5 nA
Capacitance:
5 to 7.5 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
Ceramic, Surface Mount
more info
1 - 15 of 342 Photodiodes
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