Photodiodes - Hamamatsu Photonics

376 Photodiodes from Hamamatsu Photonics meet your specification.

Photodiodes from Hamamatsu Photonics are listed on GoPhotonics. We have compiled a list of Photodiodes from the Hamamatsu Photonics website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Hamamatsu Photonics and their distributors in your region.

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  • Manufacturer : Hamamatsu Photonics
Description: InGaAs PIN photodiode from 0.5 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.5 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 1.5 nA
Capacitance:
10 to 15 pF
Responsivity/Photosensitivity:
0.15 to 1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.5 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.5 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 2.5 nA
Capacitance:
20 to 30 pF
Responsivity/Photosensitivity:
0.15 to 1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.5 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.5 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
1 to 5 nA
Capacitance:
70 to 130 pF
Responsivity/Photosensitivity:
0.15 to 1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.5 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.5 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
5 to 25 nA
Capacitance:
300 to 800 pF
Responsivity/Photosensitivity:
0.15 to 1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.5 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.5 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
15 to 75 nA
Capacitance:
600 to 1200 pF
Responsivity/Photosensitivity:
0.15 to 1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
40 to 800 pA
Capacitance:
3 to 5 pF
Responsivity/Photosensitivity:
0.75 to 1 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
100 to 1200 pA
Capacitance:
5 to 8 pF
Responsivity/Photosensitivity:
0.75 to 1 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
800 to 4000 pA
Capacitance:
55 to 120 pF
Responsivity/Photosensitivity:
0.75 to 1 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 0.5 nA
Capacitance:
5 to 7.5 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 0.75 nA
Capacitance:
15 to 20 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.8 to 4 nA
Capacitance:
55 to 120 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
1.5 to 7.5 nA
Capacitance:
250 to 800 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
2.5 to 12.5 nA
Capacitance:
450 to 1500 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
5 to 25 nA
Capacitance:
1000 to 7000 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.67 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.67 µm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.1 nA
Capacitance:
75 to 140 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
1 - 15 of 376 Photodiodes

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