Photodiodes - Hamamatsu Photonics

376 Photodiodes from Hamamatsu Photonics meet your specification.

Photodiodes from Hamamatsu Photonics are listed on GoPhotonics. We have compiled a list of Photodiodes from the Hamamatsu Photonics website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Hamamatsu Photonics and their distributors in your region.

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  • Manufacturer : Hamamatsu Photonics
Description: 440 to 1100 nm VIS-NIR TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
440 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 2 nA
Capacitance:
1.1 pF
Responsivity/Photosensitivity:
0.52 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 266 nm Ultraviolet TO-8 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
266 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 10 nA
Capacitance:
11 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 400 to 1000 nm Visible TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 2 nA
Capacitance:
6 pF
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 400 to 1000 nm VIS-NIR TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Capacitance:
1.5 pF
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 440 to 1100 nm Near-Infrared TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
440 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.4 pF
Responsivity/Photosensitivity:
0.52 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 400 to 1000 nm Visible TO-8 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 30 nA
Capacitance:
95 pF
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 0.95 to 1.7 µm Near-Infrared TO-18 InGaAs Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.95 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
90 to 140 nA
Capacitance:
0.7 to 1 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 200 to 1000 nm UV-VIS TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
200 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 30 nA
Capacitance:
120 pF
Responsivity/Photosensitivity:
0.42 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 320 to 1000 nm UV-VIS-NIR TO-8 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 35 nA
Capacitance:
55 pF
Responsivity/Photosensitivity:
0.3 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 320 to 1000 nm UV-VIS-NIR TO-8 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 15 nA
Capacitance:
22 pF
Responsivity/Photosensitivity:
0.3 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 0.95 to 1.7 µm Near-Infrared TO-18 InGaAs Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.95 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
40 to 65 nA
Capacitance:
0.35 to 0.45 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 200 to 1000 nm UV-VIS TO-8 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
200 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 100 nA
Capacitance:
320 pF
Responsivity/Photosensitivity:
0.42 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 400 to 1000 nm Visible TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
10 pF
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 440 to 1100 nm Near-Infrared TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
440 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 2 nA
Capacitance:
0.7 pF
Responsivity/Photosensitivity:
0.52 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 200 to 1000 nm UV-VIS TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
200 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 15 nA
Capacitance:
30 pF
Responsivity/Photosensitivity:
0.42 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
1 - 15 of 376 Photodiodes

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