Photodiodes - Excelitas Technologies

138 Photodiodes from Excelitas Technologies meet your specification.

Photodiodes from Excelitas Technologies are listed on GoPhotonics. We have compiled a list of Photodiodes from the Excelitas Technologies website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Excelitas Technologies and their distributors in your region.

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  • Manufacturer : Excelitas Technologies
Description: Silicon Avalanche Photodiode from 400 to 700 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 700 nm
Operation Mode:
Photovoltaic
Dark Current:
2 nA
Capacitance:
60 pF
Responsivity/Photosensitivity:
52 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN Photodiode from 800 to 1700 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 20 nA
Capacitance:
2 to 15 pF
Responsivity/Photosensitivity:
0.10 to 1.05 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN Photodiode from 1300 to 1500 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1500 nm
Operation Mode:
Photoconductive
Dark Current:
<1 to 5 nA
Capacitance:
3.7 to 6 pF
Responsivity/Photosensitivity:
0.65 to 0.90 A/W
Package Type:
TO-Can, Ceramic
Configuration:
Single
Module:
No
more info
Description: Silicon photodiode from 400 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
<5 to 10 nA
Capacitance:
<120 pF
Responsivity/Photosensitivity:
0.70 A/W
Package Type:
Chip
Configuration:
Array
Module:
No
more info
Description: Silicon Avalanche Photodiode 905 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
905 nm
Operation Mode:
Photoconductive
Dark Current:
20 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
8.5 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN Photodiode from 400 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 150 nA
Capacitance:
12 to 20 pF
Responsivity/Photosensitivity:
0.44 to 0.6 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: Silicon Avalanche Photodiode 905 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
905 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Capacitance:
0.6 pF
Responsivity/Photosensitivity:
55 to 60 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon photodiode from 400 to 1150 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1150 nm
Operation Mode:
Photoconductive
Dark Current:
20 nA
Capacitance:
50 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Surface Mount
Module:
No
more info
Description: Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 pA
Capacitance:
8 nF
Responsivity/Photosensitivity:
0.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN Photodiode from 650 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
650 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.05 nA
Capacitance:
11 pF
Responsivity/Photosensitivity:
0.47 A/W
Package Type:
Through-Hole
Configuration:
Single
Module:
No
more info
Description: Silicon PIN Photodiode from 400 to 1150 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1150 nm
Operation Mode:
Photoconductive
Dark Current:
11 to 20 nA
Capacitance:
2.5 pF
Responsivity/Photosensitivity:
0.44 to 0.70 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InP Avalanche Photodiode from 1100 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
InP
Wavelength Range:
1100 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
45 to 150 nA
Capacitance:
2.5 pF
Responsivity/Photosensitivity:
9.3 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
100 pA
Capacitance:
1 nF
Responsivity/Photosensitivity:
0.10 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Silicon Avalanche Photodiode 1060 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
1060 nm
Operation Mode:
Photoconductive
Dark Current:
100 to 200 nA
Capacitance:
0.5 to 5 pF
Responsivity/Photosensitivity:
12 to 15 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon photodiode from 400 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
3 to 30 nA
Capacitance:
0.18 to 0.30 nF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
1 - 15 of 138 Photodiodes

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