Photodiodes - Chunghwa Leading Photonics Tech (CLPT)

15 Photodiodes from Chunghwa Leading Photonics Tech (CLPT) meet your specification.
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  • Manufacturer : Chunghwa Leading Photonics Tech (CLPT)
Description: 0.9 µm to 1.7 µm, InGaAs PIN Photodiode for Humidity & Gas Leak Detection Applications
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
25 to 50 nA
Capacitance:
1800 to 2200 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
more info
Description: 0.6 µm to 1.7 µm, InGaAs PIN Photodiodes for Optical Powering Applications
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Capacitance:
20 to 50 pF
Responsivity/Photosensitivity:
0.2 to 0.95 A/W
Package Type:
TO-Can
more info
Description: InGaAs, PIN Photodiode from 0.9 to 2.2 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
1400 to 2300 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
Package Type:
TO-Can
more info
Description: 0.9 µm - 1.7 µm, InGaAs PIN Photodiode for Optical Powering Applications
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
1 to 2 nA
Capacitance:
120 to 160 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
Package Type:
TO-Can
more info
Description: InGaAs, PIN Photodiode from 0.6 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 5 nA
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.2 to 0.95 A/W
Package Type:
TO-Can
more info
Description: InGaAs, Avalanche Photodiode from 0.95 to 1.65 µm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
5 to 50 nA
Capacitance:
2.5 to 3 pF
Responsivity/Photosensitivity:
8 to 9 A/W
Package Type:
Chip
more info
Description: InGaAs, Avalanche Photodiode from 0.95 to 1.65 µm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
5 to 50 nA
Capacitance:
2.5 to 3 pF
Responsivity/Photosensitivity:
8 to 9 A/W
Package Type:
Ceramic
more info
Description: InGaAs, PIN Photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 0.6 nA
Capacitance:
35 to 50 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
Package Type:
TO-Can
more info
Description: InGaAs, PIN Photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
5 to 10 nA
Capacitance:
400 to 800 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
Package Type:
TO-Can
more info
Description: InGaAs, PIN Photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
1 to 2 nA
Capacitance:
80 to 200 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
more info
Description: InGaAs, Avalanche Photodiode from 0.95 to 1.65 µm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
5 to 50 nA
Capacitance:
2.5 to 3 pF
Responsivity/Photosensitivity:
8 to 9 A/W
Package Type:
TO-Can
more info
Description: 0.9 µm - 1.7 µm, InGaAs PIN Photodiodes for LiDAR & Optical Powering Applications
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
900 to 1300 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
Package Type:
TO-Can
more info
Description: 0.6 µm to 1.7 µm, InGaAs PIN Photodiode for LiDAR & Optical Powering Applications
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.2 to 0.95 A/W
Package Type:
TO-Can
more info
Description: 0.9 µm to 2.2 µm, InGaAs PIN Photodiodes for LiDAR & Detection Applications
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photoconductive
Dark Current:
2.5 to 5 nA
Capacitance:
300 to 600 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
Package Type:
TO-Can
more info
Description: InGaAs, Avalanche Photodiode from 0.95 to 1.65 µm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
5 to 50 nA
Capacitance:
2.5 to 3 pF
Responsivity/Photosensitivity:
8 to 9 A/W
Package Type:
TO-Can
more info
1 - 15 of 15 Photodiodes

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