Photodiodes - Chunghwa Leading Photonics Tech (CLPT)
12 Photodiodes from Chunghwa Leading Photonics Tech (CLPT) meet your specification.
Photodiodes from Chunghwa Leading Photonics Tech (CLPT) are listed on GoPhotonics. We have compiled a list of Photodiodes from the Chunghwa Leading Photonics Tech (CLPT) website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Chunghwa Leading Photonics Tech (CLPT) and their distributors in your region.
Selected Filters Reset All Manufacturer : Chunghwa Leading Photonics Tech (CLPT)
Description: 0.6 µm to 1.7 µm, InGaAs PIN Photodiodes for Optical Powering Applications
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Responsivity/Photosensitivity:
0.2 to 0.95 A/W
more info
Description: 0.9 µm to 2.2 µm, InGaAs PIN Photodiodes for Power Monitoring Applications
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
10 to 20 nA
Capacitance:
1400 to 2300 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
more info
Description: InGaAs, Avalanche Photodiode from 0.95 to 1.65 µm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
8 to 9 A/W
more info
Description: 0.9 µm to 1.7 µm, InGaAs PIN Photodiode for Humidity & Gas Leak Detection Applications
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
25 to 50 nA
Capacitance:
1800 to 2200 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
Package Type:
Ceramic, Chip
more info
Description: 0.9 µm - 1.7 µm, InGaAs PIN Photodiodes for LiDAR & Optical Powering Applications
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
900 to 1300 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
more info
Description: 0.9 µm - 1.7 µm, InGaAs PIN Photodiode for Optical Powering Applications
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Capacitance:
120 to 160 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
more info
Description: 0.95 µm - 1.65 µm, InGaAs Avalanche Photodiode for LiDAR Applications
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
8 to 9 A/W
more info
Description: 0.6 µm to 1.7 µm, InGaAs PIN Photodiode for LiDAR & Optical Powering Applications
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.2 to 0.95 A/W
more info
Description: InGaAs, PIN Photodiode from 0.9 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Capacitance:
400 to 800 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
more info
Description: InGaAs, PIN Photodiode from 0.9 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 0.6 nA
Responsivity/Photosensitivity:
0.1 to 1 A/W
more info
Description: 0.9 µm to 2.2 µm, InGaAs PIN Photodiodes for LiDAR & Detection Applications
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
2.5 to 5 nA
Capacitance:
300 to 600 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
more info
Description: InGaAs, PIN Photodiode from 0.6 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.2 to 0.95 A/W
more info
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Selected Filters Reset All Manufacturer : Chunghwa Leading Photonics Tech (CLPT)
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