Photodiodes - Laser Components

138 Photodiodes from Laser Components meet your specification.
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Manufacturer : Laser Components  reset
Description:500 µm Diameter Red Enhance Silicon Avalanche Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photovoltaic
Dark Current:
5 to 30 nA
Capacitance:
4 to 10 pF
Responsivity/Photosensitivity:
30 to 38 A/W
Package Type:
TO-Can, Surface Mount, Submount, Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description:400 to 1000 nm Silicon Avalanche Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photovoltaic
Dark Current:
5 to 30 nA
Capacitance:
4 to 10 pF
Responsivity/Photosensitivity:
30 to 38 A/W
Package Type:
TO-Can, Surface Mount, Submount, Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description:Silicon Geiger Mode Avalanche Photodiode for Photon Counting
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
70 to 1000 pA
Capacitance:
3.3 pF
Responsivity/Photosensitivity:
85 to 110 A/W
Package Type:
TO-Can Pigtail, TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description:Extended InGaAs Photodiodes
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1.87 µm
Operation Mode:
Photoconductive
Dark Current:
5 to 400 nA
Capacitance:
60 to 1040 pF
Responsivity/Photosensitivity:
0.1 to 1.05 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description:Regular InGaAs Photodiodes
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1.55 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 75 nA
Capacitance:
15 to 1550 pF
Responsivity/Photosensitivity:
0.9 to 1.05 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description:Extended InGaAs PIN Photodiodes for Spectroscopy Applications
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
2.45 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 750 uA
Capacitance:
35 to 3200 pF
Responsivity/Photosensitivity:
0.1 to 1.50 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description:Extended InGaAs Photodiodes
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
2.35 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 25 uA
Capacitance:
60 to 1040 pF
Responsivity/Photosensitivity:
1.25 to 1.40 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description:850 nm Linear Silicon Avalanche Photodiode for Time-of-Flight Sensors
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
850 nm
Operation Mode:
Photoconductive
Dark Current:
4 to 10 nA
Capacitance:
3 pF
Responsivity/Photosensitivity:
40 to 50 A/W
Package Type:
Chip
Configuration:
Array
Channels:
Multiple
Module:
No
more info
Description:Si APD Array
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
850 nm
Operation Mode:
Photoconductive
Dark Current:
4 to 10 nA
Capacitance:
3 pF
Responsivity/Photosensitivity:
40 to 50 A/W
Package Type:
Chip
Configuration:
Array
Channels:
Multiple
Module:
No
more info
Description:Si APD Array
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
850 nm
Operation Mode:
Photoconductive
Dark Current:
4 to 10 nA
Capacitance:
3 pF
Responsivity/Photosensitivity:
40 to 50 A/W
Package Type:
Chip
Configuration:
Array
Channels:
Multiple
Module:
No
more info