Photodiodes - Dexerials Corporation
54 Photodiodes from Dexerials Corporation meet your specification.
Photodiodes from Dexerials Corporation are listed on GoPhotonics. We have compiled a list of Photodiodes from the Dexerials Corporation website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Dexerials Corporation and their distributors in your region.
Selected Filters Reset All Manufacturer : Dexerials Corporation
Description: 900 to 1700 nm KP-E Edge Illuminated InGaAs Photodiodes with Chip package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 300 pA
Responsivity/Photosensitivity:
0.5 to 0.75 A/W
more info
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
more info
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
more info
Description: 650 to 880 nm GaAs Photodiodes with Chip package
Photodiode Material:
Gallium Arsenide (GaAs)
Wavelength Range:
650 to 880 nm
Operation Mode:
Photoconductive
more info
Description: 400 to 1100 nm Si Photodiodes with DIP / DIL / Thru-Hole package
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
14 pF (Terminal)
Package Type:
DIP / DIL / Thru-Hole
more info
Description: 900 to 1700 nm KP-E Edge Illuminated InGaAs Photodiodes with Chip package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
35 to 300 pA
Capacitance:
0.85 to 1.2 pF
Responsivity/Photosensitivity:
0.5 to 0.8 A/W
more info
Description: 900 to 1700 nm InGaAs Photodiodes with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.8 to 1 A/W
more info
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with Coaxial Pigtail package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
30 to 160 pA
Capacitance:
0.91 to 1.1 pF
Responsivity/Photosensitivity:
0.8 to 0.98 A/W
Package Type:
Coaxial Pigtail
more info
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
100 to 600 pA
Responsivity/Photosensitivity:
0.8 to 1 A/W
more info
Description: 850 nm Silicon Photodiode for Pulse Detector Applications
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
14 pF (Terminal)
Package Type:
DIP / DIL / Thru-Hole
more info
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
more info
Description: 400 to 1100 nm Si Photodiodes with DIP / DIL / Thru-Hole package
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
6 pF (Terminal)
Package Type:
DIP / DIL / Thru-Hole
more info
Description: 900 to 1700 nm KP-H InGaAs Photodiode with Chip package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
20 to 100 nA
Responsivity/Photosensitivity:
0.63 to 0.7 A/W
more info
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
more info
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
more info
1 - 15 of 54 Photodiodes
Photodiode companies
Filters
X
Selected Filters Reset All Manufacturer : Dexerials Corporation
../../56photodiodesPhotodiodessphotodetector_type:expand,sphotodiode_material:expand,spackage_type:expand,soperation_mode:expand,soptical_connector:collapsed,srf_connector:collapsed,sschannels:expand,ssconfiguration:expand,stags:expandsphotodetector_type:single,sphotodiode_material:multiple,spackage_type:multiple,soperation_mode:single,soptical_connector:single,srf_connector:single,sschannels:single,ssconfiguration:single,stags:singlesphotodetector_type:Photodetector Type,sphotodiode_material:Photodiode Material,spackage_type:Package Type,soperation_mode:Operation Mode,soptical_connector:Optical Connector,srf_connector:RF Connector,sschannels:Channels,ssconfiguration:Configuration,stags:Tagsswavelength_range:expand,scapacitance:expand,sphotosensitivity:expand,sdetector_dark_current:expandswavelength_range:3489,scapacitance:3540,sphotosensitivity:3524,sdetector_dark_current:3533{"sphotodetector_type":"or","sphotodiode_material":"or","spackage_type":"or","soperation_mode":"or","swavelength_range":"or","soptical_connector":"or","scapacitance":"or","sphotosensitivity":"or","srf_connector":"or","sdetector_dark_current":"or","sschannels":"or","ssconfiguration":"or","stags":"or"}swavelength_range:nm,scapacitance:pF,sphotosensitivity:A/W,sdetector_dark_current:nAno
56
-
View Similar Products
You can now view similar products from this company on GoPhotonics.