Photodiodes - Dexerials Corporation

54 Photodiodes from Dexerials Corporation meet your specification.

Photodiodes from Dexerials Corporation are listed on GoPhotonics. We have compiled a list of Photodiodes from the Dexerials Corporation website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Dexerials Corporation and their distributors in your region.

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  • Manufacturer : Dexerials Corporation
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with Coaxial Pigtail package
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
30 to 160 pA
Capacitance:
0.91 to 1.1 pF
Responsivity/Photosensitivity:
0.8 to 0.98 A/W
Package Type:
Coaxial Pigtail
Channels:
Multiple
Module:
No
more info
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
400 pA
Capacitance:
5 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 850 nm Silicon Photodiode for Pulse Detector Applications
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
14 pF (Terminal)
Package Type:
DIP / DIL / Thru-Hole
Module:
No
more info
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
160 pA
Capacitance:
1.1 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 400 to 1000 nm Si Photodiodes with TO-Can package
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 40 pA
Capacitance:
1.2 to 1.6 pF
Responsivity/Photosensitivity:
0.35 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 900 to 1700 nm KP-R InGaAs Photodiodes for Receivers with Chip package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 200 pA
Capacitance:
0.17 to 0.35 pF
Responsivity/Photosensitivity:
0.8 to 0.85 A/W
Package Type:
Chip
Module:
No
more info
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
100 to 600 pA
Capacitance:
4 to 6 pF
Responsivity/Photosensitivity:
0.8 to 1 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
400 pA
Capacitance:
5 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 400 to 1100 nm Si Photodiodes with DIP / DIL / Thru-Hole package
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
14 pF (Terminal)
Package Type:
DIP / DIL / Thru-Hole
Module:
No
more info
Description: 650 to 880 nm GaAs Photodiodes with Chip package
Photodiode Material:
Gallium Arsenide (GaAs)
Wavelength Range:
650 to 880 nm
Operation Mode:
Photoconductive
Dark Current:
2.5 pA
Capacitance:
3.5 pF
Package Type:
Chip
Module:
No
more info
Description: 900 to 1700 nm KP-H InGaAs Photodiode with Chip package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
20 to 100 nA
Responsivity/Photosensitivity:
0.63 to 0.7 A/W
Package Type:
Chip
Module:
No
more info
Description: 400 to 1100 nm Si Photodiodes with DIP / DIL / Thru-Hole package
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
14 pF (Terminal)
Package Type:
DIP / DIL / Thru-Hole
Module:
No
more info
Description: 400 to 1000 nm (Silicon), 900 to 1700 nm (InGaAs) KP-2 Two-tone Photodiodes with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs), Silicon (Si)
Wavelength Range:
400 to 1000 nm (Silicon), 900 to 1700 nm (InGaAs)
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 nA (Silicon), 1 to 10 nA (InGaAs)
Capacitance:
30 to 50 pF (Silicon), 45 to 60 pF (InGaAs)
Responsivity/Photosensitivity:
0.5 to 0.7 A/W (Silicon), 0.7 to 0.9 A/W (InGaAs)
Package Type:
TO-Can
Module:
No
more info
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
600 pA
Capacitance:
6 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 400 pA
Capacitance:
3 to 5 pF
Responsivity/Photosensitivity:
0.8 to 1 A/W
Package Type:
TO-Can
Module:
No
more info
1 - 15 of 54 Photodiodes

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